Microchip Technology_LND01K1-G
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Microchip Technology
LND01K1-G

278-LND01K1-G
PDF Datasheet
MOSFET N-CH 9V 330MA SOT23-5
4 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 5 V
Product Status
Active
Supplier Device Package
SOT-23-5
Drain to Source Voltage (Vdss)
9 V
Power Dissipation (Max)
360mW (Ta)
Package / Case
SC-74A, SOT-753
Technology
MOSFET (Metal Oxide)
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LND01K1-G Description

LND01K1-G Description

The LND01K1-G is a high-performance, single N-Channel MOSFET from Microchip Technology, designed to deliver superior performance in various electronic applications. With its advanced technology and unique features, this MOSFET stands out from the competition, offering excellent performance and reliability.

LND01K1-G Features

  • Technology: MOSFET (Metal Oxide) - Utilizing the latest metal oxide technology, the LND01K1-G ensures high efficiency and low power consumption.
  • Depletion Mode: This unique feature allows the LND01K1-G to operate in both enhancement and depletion modes, providing greater flexibility in circuit design.
  • Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 5 V - This low input capacitance ensures fast switching speeds and minimal signal distortion.
  • Drain to Source Voltage (Vdss): 9 V - The LND01K1-G can handle high voltages, making it suitable for a wide range of applications.
  • Power Dissipation (Max): 360mW (Ta) - This high power dissipation rating allows the LND01K1-G to operate in demanding environments without overheating.
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 0V - The low on-resistance ensures minimal power loss and high efficiency.
  • Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) - This high continuous drain current rating allows the LND01K1-G to handle heavy loads.
  • Mounting Type: Surface Mount - The surface mount design allows for easy integration into compact electronic devices.

LND01K1-G Applications

The LND01K1-G is ideal for a variety of applications, including:

  1. Power Management: Due to its high power dissipation and low on-resistance, the LND01K1-G is perfect for power management applications in electronic devices.
  2. Automotive Electronics: The LND01K1-G's high voltage and current ratings make it suitable for use in automotive electronics, such as power windows and seat controls.
  3. Industrial Controls: The LND01K1-G's robust performance and reliability make it an excellent choice for industrial control systems, where high voltage and current ratings are required.
  4. Consumer Electronics: The LND01K1-G's compact size and low power consumption make it ideal for use in consumer electronics, such as smartphones and laptops.

Conclusion of LND01K1-G

The LND01K1-G is a versatile and high-performance MOSFET from Microchip Technology, offering unique features and advantages over similar models. Its advanced technology, low input capacitance, and high power dissipation make it ideal for a wide range of applications, from power management to automotive electronics. With its exceptional performance and reliability, the LND01K1-G is the perfect choice for demanding electronic applications.

FAQ

What is the mounting type of LND01K1-G?
LND01K1-G uses a Surface Mount mounting style based on the listed product specifications.
What package or case is LND01K1-G available in?
What is LND01K1-G?
Is LND01K1-G currently in stock?
What is the standard lead time for LND01K1-G?
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