Microchip Technology

LND01K1-G  

Single FETs, MOSFETs

LND01K1-G Description

The LND01K1-G is a high-performance, single N-Channel MOSFET from Microchip Technology, designed to deliver superior performance in various electronic applications. With its advanced technology and unique features, this MOSFET stands out from the competition, offering excellent performance and reliability.

LND01K1-G Features

• Technology: MOSFET (Metal Oxide) - Utilizing the latest metal oxide technology, the LND01K1-G ensures high efficiency and low power consumption.
• Depletion Mode: This unique feature allows the LND01K1-G to operate in both enhancement and depletion modes, providing greater flexibility in circuit design.
• Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 5 V - This low input capacitance ensures fast switching speeds and minimal signal distortion.
• Drain to Source Voltage (Vdss): 9 V - The LND01K1-G can handle high voltages, making it suitable for a wide range of applications.
• Power Dissipation (Max): 360mW (Ta) - This high power dissipation rating allows the LND01K1-G to operate in demanding environments without overheating.
• Rds On (Max) @ Id, Vgs: 1.4Ohm @ 100mA, 0V - The low on-resistance ensures minimal power loss and high efficiency.
• Current - Continuous Drain (Id) @ 25°C: 330mA (Tj) - This high continuous drain current rating allows the LND01K1-G to handle heavy loads.
• Mounting Type: Surface Mount - The surface mount design allows for easy integration into compact electronic devices.

LND01K1-G Applications

The LND01K1-G is ideal for a variety of applications, including:

1. Power Management: Due to its high power dissipation and low on-resistance, the LND01K1-G is perfect for power management applications in electronic devices.
2. Automotive Electronics: The LND01K1-G's high voltage and current ratings make it suitable for use in automotive electronics, such as power windows and seat controls.
3. Industrial Controls: The LND01K1-G's robust performance and reliability make it an excellent choice for industrial control systems, where high voltage and current ratings are required.
4. Consumer Electronics: The LND01K1-G's compact size and low power consumption make it ideal for use in consumer electronics, such as smartphones and laptops.

Conclusion of LND01K1-G

The LND01K1-G is a versatile and high-performance MOSFET from Microchip Technology, offering unique features and advantages over similar models. Its advanced technology, low input capacitance, and high power dissipation make it ideal for a wide range of applications, from power management to automotive electronics. With its exceptional performance and reliability, the LND01K1-G is the perfect choice for demanding electronic applications.

LND01K1-G Documents

Download datasheets and manufacturer documentation for LND01K1-G

PCN Assembly/Origin :

Fab Site Addition Update 07/Oct/2015      

Datasheets :

LND01      

PCN Packaging :

Packing Changes 10/Oct/2016       Label and Packing Changes 23/Sep/2015      

PCN Design/Specification :

Site Chg 13/Jan/2016       LND01K1-G 21/Jun/2017      

Environmental Information :

Microchip CA Prop65       Microchip RoHS       Microchip REACH