Microchip Technology_TN0106N3-G
original

Microchip Technology
TN0106N3-G

278-TN0106N3-G
PDF Datasheet
MOSFET N-CH 60V 350MA TO92-3
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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
6
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
Typical Rise Time (ns)
3
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
2
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TN0106N3-G Description

TN0106N3-G Description

The TN0106N3-G from Microchip Technology is an N-channel MOSFET designed for low-power switching applications. With a 60V drain-to-source voltage (Vdss) and 350mA continuous drain current (Id), it offers reliable performance in compact designs. The device features a low input capacitance (Ciss) of 60pF @ 25V, ensuring fast switching speeds and reduced power losses. Its 3Ω maximum on-resistance (Rds On) @ 500mA, 10V enhances efficiency in low-voltage drive circuits. Packaged in a TO-92-3 through-hole format, it is suitable for prototyping and space-constrained applications. The MOSFET is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.

TN0106N3-G Features

  • Low Rds On: 3Ω @ 500mA, 10V minimizes conduction losses.
  • Wide Vgs Range: ±20V gate-to-source voltage tolerance for flexible drive requirements.
  • Fast Switching: Low Ciss (60pF) enables high-frequency operation.
  • Robust Construction: 60V Vdss and 1W power dissipation (Tc) ensure durability.
  • Easy Integration: TO-92-3 through-hole package simplifies assembly.
  • Environmental Compliance: RoHS3 and REACH unaffected for global use.

TN0106N3-G Applications

  • Low-Power Switching: Ideal for relay drivers, signal switching, and load control.
  • Battery-Powered Devices: Efficient power management in portable electronics.
  • Automotive Systems: Suitable for low-current auxiliary circuits.
  • Industrial Controls: Reliable performance in sensors and actuators.
  • Consumer Electronics: Used in power supplies and LED drivers.

Conclusion of TN0106N3-G

The TN0106N3-G is a versatile N-channel MOSFET offering high efficiency, compact design, and robust performance. Its low on-resistance, fast switching, and wide voltage tolerance make it superior to similar low-power MOSFETs. Whether for industrial, automotive, or consumer applications, this device delivers reliable operation while meeting environmental standards. Its TO-92-3 package ensures ease of use, making it a preferred choice for engineers seeking cost-effective and high-performance solutions.

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