Microchip Technology

MSC080SMA120B  

Single FETs, MOSFETs

MSC080SMA120B Description

The MSC080SMA120B from Microchip Technology is a high-performance SiCFET (Silicon Carbide) N-channel MOSFET designed for demanding power electronics applications. With a 1200V drain-to-source voltage (Vdss) and 37A continuous drain current (Id), this device delivers superior efficiency and reliability in high-voltage, high-frequency circuits. Its low on-resistance (Rds On) of 100mOhm at 15A, 20V minimizes conduction losses, while the SiC technology ensures high thermal conductivity and robustness in harsh environments. Packaged in a TO-247-3 through-hole format, it is ideal for industrial and automotive applications requiring high power density and thermal management.

MSC080SMA120B Features

• SiCFET Technology: Silicon Carbide construction enables higher efficiency, faster switching, and lower thermal resistance compared to traditional Si MOSFETs.
• High Voltage & Current Handling: 1200V Vdss and 37A Id make it suitable for high-power applications.
• Low Gate Charge (Qg): 64 nC at 20V reduces switching losses, improving overall system efficiency.
• Low On-Resistance: 100mOhm at 15A, 20V minimizes power dissipation.
• Robust Thermal Performance: 200W power dissipation (Tc) ensures stability under high loads.
• Compliance & Reliability: ROHS3 Compliant, REACH Unaffected, MSL 1 (Unlimited) for environmental and operational durability.

MSC080SMA120B Applications

• Electric Vehicle (EV) Systems: On-board chargers, DC-DC converters, and traction inverters benefit from its high-voltage capability and efficiency.
• Renewable Energy: Solar inverters and wind power converters leverage its low-loss switching for improved energy harvesting.
• Industrial Power Supplies: High-frequency SMPS, UPS, and motor drives utilize its thermal robustness and low Rds On.
• High-Voltage DC/DC Converters: Telecom and server power systems require its fast switching and high reliability.

Conclusion of MSC080SMA120B

The MSC080SMA120B stands out as a high-efficiency, high-reliability SiC MOSFET for next-generation power electronics. Its combination of low conduction losses, fast switching, and thermal stability makes it ideal for EV, renewable energy, and industrial applications. Microchip’s advanced SiCFET technology ensures superior performance over traditional silicon-based alternatives, positioning this device as a top choice for engineers designing high-power systems.

MSC080SMA120B Documents

Download datasheets and manufacturer documentation for MSC080SMA120B

PCN Assembly/Origin :

Mult Dev 05/Dec/2023      

Datasheets :

MSC080SMA120B      

PCN Packaging :

Label Change 03/Jan/2023      

PCN Design/Specification :

Top Marking Changes 22/Feb/2023      

Environmental Information :

Microchip CA Prop65       Microchip RoHS       Microchip REACH