Microchip Technology

MSC040SMA120B4  

Single FETs, MOSFETs

MSC040SMA120B4 Description

The MSC040SMA120B4 is a high-performance Silicon Carbide (SiCFET) N-channel MOSFET from Microchip Technology, designed for demanding power electronics applications. With a 1200V drain-to-source voltage (Vdss) and 66A continuous drain current (Id), this device delivers robust performance in high-voltage, high-current environments. Its low on-resistance (Rds(on)) of 50mΩ at 40A and 20V gate drive ensures minimal conduction losses, while the 1990pF input capacitance (Ciss) and 137nC total gate charge (Qg) enable fast switching speeds. Packaged in a TO-247-4 through-hole format, it is ideal for applications requiring high thermal efficiency and reliability.

MSC040SMA120B4 Features

• Advanced SiC Technology: Offers superior thermal conductivity, higher breakdown voltage, and lower switching losses compared to traditional silicon MOSFETs.
• High Power Handling: Supports 323W maximum power dissipation (Tc) for high-efficiency operation.
• Optimized Switching Performance: Low gate threshold voltage (Vgs(th)) of 2.6V at 2mA ensures precise control with minimal drive power.
• Reliable Packaging: TO-247-4 package enhances thermal management, critical for high-power designs.
• Environmental Compliance: REACH unaffected and Moisture Sensitivity Level (MSL) 1 for extended shelf life and reliability.

MSC040SMA120B4 Applications

This MOSFET is ideal for:

• Electric Vehicle (EV) Power Systems: On-board chargers, DC-DC converters, and traction inverters benefit from its high-voltage capability and efficiency.
• Renewable Energy: Solar inverters and wind power converters leverage its low-loss switching for improved energy harvesting.
• Industrial Motor Drives: High-frequency switching reduces heat generation in motor control applications.
• High-Voltage Power Supplies: Suitable for telecom, server, and medical power systems requiring robust performance.

Conclusion of MSC040SMA120B4

The MSC040SMA120B4 stands out as a high-efficiency, high-reliability SiC MOSFET, offering significant advantages in power density, thermal performance, and switching speed over conventional silicon-based devices. Its combination of 1200V rating, low Rds(on), and fast switching makes it a top choice for next-generation power electronics in automotive, industrial, and renewable energy sectors. Microchip’s commitment to quality ensures this device meets stringent performance and durability requirements.

MSC040SMA120B4 Documents

Download datasheets and manufacturer documentation for MSC040SMA120B4

PCN Assembly/Origin :

Mult Dev 05/Dec/2023      

Datasheets :

MSC040SMA120B4      

PCN Packaging :

Label Change 03/Jan/2023      

HTML Datasheet :

MSC040SMA120B4      

PCN Design/Specification :

Top Marking Changes 22/Feb/2023      

Environmental Information :

Microchip CA Prop65       Microchip RoHS       Microchip REACH