Microchip Technology_DN3535N8-G

Microchip Technology
DN3535N8-G  
Single FETs, MOSFETs

DN3535N8-G
278-DN3535N8-G
Ersa
Microchip Technology-DN3535N8-G-datasheets-1837913.pdf
MOSFET N-CH 350V 230MA TO243AA
In Stock : 10792

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DN3535N8-G Description

DN3535N8-G Description

The DN3535N8-G is a high-performance N-Channel MOSFET from Microchip Technology, designed for applications requiring efficient power management and control. With a drain-to-source voltage (Vdss) of 350V and a continuous drain current (Id) of 230mA at 25°C, it offers robust performance in a variety of electronic systems. This MOSFET features a depletion mode operation, which allows for a wide range of applications, including power switching, motor control, and signal amplification.

DN3535N8-G Features

  • Technology: MOSFET (Metal Oxide) - Ensures high efficiency and low power loss.
  • Depletion Mode: Offers flexibility in circuit design and operation.
  • Input Capacitance (Ciss): 360 pF @ 25 V - Minimizes input capacitance for faster switching.
  • Vgs (Max): ±20V - Supports a wide range of gate voltages for compatibility with various control circuits.
  • Rds On (Max): 10 Ohm @ 150mA, 0V - Provides low on-resistance for efficient power flow.
  • Power Dissipation (Max): 1.6W (Ta) - Capable of handling higher power dissipation for demanding applications.
  • Mounting Type: Surface Mount - Ideal for space-constrained designs and high-density PCB layouts.
  • Package: Tape & Reel (TR) - Facilitates automated assembly and reduces handling damage.

DN3535N8-G Applications

The DN3535N8-G is well-suited for a variety of applications where high voltage and current handling are required:

  1. Power Switching: Its high Vdss and low Rds On make it ideal for power management in consumer electronics and industrial control systems.
  2. Motor Control: The depletion mode operation and high current capability are beneficial for motor drive circuits in robotics and automation.
  3. Signal Amplification: The low input capacitance and wide Vgs range are advantageous for high-speed signal processing applications.

Conclusion of DN3535N8-G

The DN3535N8-G stands out for its combination of high voltage and current ratings, depletion mode operation, and low on-resistance, making it a versatile choice for demanding electronic applications. Its surface mount package and tape & reel option also cater to modern manufacturing processes. With compliance to RoHS3 and REACH standards, the DN3535N8-G is not only a high-performing component but also an environmentally responsible choice for electronic design engineers.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

DN3535N8-G Documents

Download datasheets and manufacturer documentation for DN3535N8-G

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Ersa Product Change Notification (PDF)      

Shopping Guide

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