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Microchip Technology
JANS2N4957UB
283-JANS2N4957UB
PDF Datasheet
Trans RF BJT PNP 30V 0.03A 200mW 4-Pin Case UB
28 weeks
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Tech Specifications
Configuration
Single
PCB changed
4
Maximum Emitter Cut-Off Current (nA)
100000
HTS
8541.21.00.95
Typical Power Gain (dB)
25(Max)
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
30
ECCN (US)
EAR99
JANS2N4957UB Description
Trans RF BJT PNP 30V 0.03A 200mW 4-Pin Case UB
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Is JANS2N4957UB currently in stock?
What operating temperature range does JANS2N4957UB support?
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