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Microchip Technology
JANTX2N2857
283-JANTX2N2857
PDF Datasheet
Trans RF BJT NPN 15V 0.04A 300mW 4-Pin TO-72
26 weeks
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Tech Specifications
Maximum Junction Case Thermal Resistance
300°C/W
Configuration
Single
PCB changed
4
Maximum Emitter Cut-Off Current (nA)
10000
HTSUS
COMPONENTS
Typical Power Gain (dB)
21
Number of Elements per Chip
1
Maximum Collector-Emitter Voltage (V)
15
JANTX2N2857 Description
Trans RF BJT NPN 15V 0.04A 300mW 4-Pin TO-72
FAQ
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