Micron Technology_EDB4432BBBJ-1DAIT-F-D
Micron Technology_EDB4432BBBJ-1DAIT-F-D
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Micron Technology
EDB4432BBBJ-1DAIT-F-D

774-EDB4432BBBJ-1DAIT-F-D
IC DRAM 4GBIT PARALLEL 134FBGA

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Tech Specifications

Clock Frequency
533 MHz
Operating Temperature
-40°C ~ 85°C (TC)
Memory Interface
Parallel
ECCN
EAR99
Memory Organization
128M x 32
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
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EDB4432BBBJ-1DAIT-F-D Description

EDB4432BBBJ-1DAIT-F-D Description

The EDB4432BBBJ-1DAIT-F-D is a high-performance 4Gbit (128M x 32) volatile DRAM from Micron Technology Inc., designed for applications demanding fast, parallel memory access. Operating at a clock frequency of 533 MHz, this surface-mount IC delivers efficient data throughput with a 1.14V to 1.95V supply voltage, optimizing power consumption for energy-sensitive designs. The parallel memory interface ensures high-speed data transfer, making it suitable for bandwidth-intensive systems. Packaged in 134FBGA (Bulk), it adheres to ROHS3 compliance and REACH unaffected standards, ensuring environmental and regulatory compatibility.

EDB4432BBBJ-1DAIT-F-D Features

  • Memory Capacity: 4Gbit (128M x 32 organization) for high-density storage.
  • High-Speed Performance: 533 MHz clock frequency enables rapid data processing.
  • Low Power Operation: Wide voltage range (1.14V–1.95V) supports energy-efficient designs.
  • Parallel Interface: Optimized for high-bandwidth applications with minimal latency.
  • Robust Packaging: 134FBGA ensures reliable surface-mount integration in compact layouts.
  • Compliance: ROHS3 and REACH compliant, with MSL 3 (168 hours) moisture sensitivity.

EDB4432BBBJ-1DAIT-F-D Applications

This DRAM is ideal for:

  • Embedded Systems: High-speed data buffering in industrial automation and IoT devices.
  • Networking Equipment: Routers, switches, and base stations requiring low-latency memory.
  • Consumer Electronics: Smart TVs, gaming consoles, and set-top boxes with parallel memory needs.
  • Automotive Infotainment: Reliable performance in temperature-varying environments.

Conclusion of EDB4432BBBJ-1DAIT-F-D

The EDB4432BBBJ-1DAIT-F-D stands out for its balance of speed, density, and power efficiency, making it a versatile choice for modern electronics. While marked obsolete, its parallel interface and 533 MHz performance remain competitive for legacy or specialized designs. Engineers seeking a high-reliability DRAM for bandwidth-critical applications will find this Micron solution a robust option.

FAQ

Are there related or alternative parts for EDB4432BBBJ-1DAIT-F-D?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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