Micron Technology_M29DW256G70NF6E
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Micron Technology
M29DW256G70NF6E

774-M29DW256G70NF6E
IC FLASH 256MBIT PARALLEL 56TSOP

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Tech Specifications

Part Status Code
Obsolete
Component Density
256Mb
I/O Voltage
3.0 VOLTS
Number of Components
1
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
56-TSOP
Access Time
70 ns
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M29DW256G70NF6E Description

M29DW256G70NF6E Description

The M29DW256G70NF6E is a high-performance, 256 Mbit Flash memory IC designed by Micron Technology Inc. This device is organized as 16M x 16 and features a parallel memory interface, making it suitable for applications requiring fast data access and high reliability. With an access time of 70 ns and a write cycle time of 70 ns, the M29DW256G70NF6E ensures efficient data transfer and storage operations. It operates within a supply voltage range of 2.7V to 3.6V, providing flexibility in power supply design.

The M29DW256G70NF6E is housed in a 56TSOP package, which is ideal for surface-mount applications, ensuring robust mechanical stability and thermal performance. This Flash memory IC is categorized under Memory IC Chips and is RoHS3 compliant, indicating its adherence to environmental standards. The product is also REACH unaffected, further ensuring its compatibility with regulatory requirements.

M29DW256G70NF6E Features

  • Memory Size: 256 Mbit, providing ample storage capacity for various applications.
  • Memory Organization: 16M x 16, offering a balanced structure for efficient data handling.
  • Access Time: 70 ns, ensuring rapid data retrieval and processing.
  • Write Cycle Time: 70 ns, facilitating quick write operations without compromising performance.
  • Voltage Range: 2.7V to 3.6V, providing flexibility in power supply options.
  • Package Type: 56TSOP, suitable for surface-mount technology (SMT) and ensuring robust mechanical and thermal performance.
  • Compliance: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
  • Moisture Sensitivity Level (MSL): Level 3 (168 Hours), indicating its suitability for various environmental conditions.

M29DW256G70NF6E Applications

The M29DW256G70NF6E is ideal for applications that require high-speed data access and reliable storage. Its fast access and write cycle times make it suitable for embedded systems, industrial control systems, and telecommunications equipment. The parallel memory interface ensures compatibility with a wide range of systems that require direct and efficient memory access.

Specific use cases include:

  • Embedded Systems: Ideal for microcontroller-based systems requiring non-volatile storage for firmware and critical data.
  • Industrial Control Systems: Suitable for programmable logic controllers (PLCs) and other industrial automation equipment.
  • Telecommunications: Applicable in networking devices and communication infrastructure for storing configuration data and firmware.
  • Consumer Electronics: Can be used in devices such as digital cameras, set-top boxes, and other consumer electronics requiring reliable Flash memory.

Conclusion of M29DW256G70NF6E

The M29DW256G70NF6E is a versatile and high-performance Flash memory IC designed to meet the demands of various applications requiring fast and reliable data storage. Its 256 Mbit capacity, fast access and write times, and robust packaging make it an excellent choice for embedded systems, industrial control, telecommunications, and consumer electronics. Despite being marked as obsolete, the M29DW256G70NF6E remains a reliable option for applications where its specific features and performance benefits are required.

FAQ

What package or case is M29DW256G70NF6E available in?
M29DW256G70NF6E is available in the 56-TFSOP (0.724", 18.40mm Width) package / case.
Does M29DW256G70NF6E have quantity-based pricing?
What voltage specification is listed for M29DW256G70NF6E?
Are there related or alternative parts for M29DW256G70NF6E?
What operating temperature range does M29DW256G70NF6E support?
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