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M29F200BB70M6E

M29F200BB70M6E Description

The M29F200BB70M6E is a 2Mbit Flash memory IC designed for high-performance applications. Manufactured by Micron Technology Inc., this device features a parallel memory interface and is housed in a 44-pin surface-mount package. It offers a memory organization of 256K x 8 or 128K x 16, providing flexible memory configurations to suit various system requirements. The M29F200BB70M6E operates within a supply voltage range of 4.5V to 5.5V and has an access time of 70 ns, ensuring fast data retrieval. The write cycle time for both word and page operations is also 70 ns, making it highly efficient for write-intensive applications. This Flash memory IC is REACH unaffected and RoHS3 compliant, meeting environmental standards for modern electronics. The product is classified under HTSUS code 8542.32.0071 and has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure to ambient conditions before assembly.

M29F200BB70M6E Features

• High-Speed Performance: With an access time of 70 ns and a write cycle time of 70 ns, the M29F200BB70M6E ensures rapid data read and write operations, making it suitable for time-sensitive applications.
• Flexible Memory Organization: The device supports both 256K x 8 and 128K x 16 memory configurations, providing system designers with options to optimize memory usage based on their specific requirements.
• Wide Voltage Range: Operating within a supply voltage range of 4.5V to 5.5V, the M29F200BB70M6E is compatible with a variety of power supply systems, enhancing its versatility.
• Environmental Compliance: Being REACH unaffected and RoHS3 compliant, the M29F200BB70M6E meets stringent environmental regulations, making it suitable for use in eco-friendly electronic designs.
• Moisture Sensitivity Level: With an MSL of 3 (168 hours), the device can withstand extended exposure to ambient conditions before assembly, reducing the risk of moisture-related damage during manufacturing processes.

M29F200BB70M6E Applications

The M29F200BB70M6E is ideal for applications requiring high-speed, non-volatile memory storage. Its fast access and write times make it suitable for embedded systems, industrial control units, and communication devices where quick data retrieval and storage are critical. The flexible memory organization allows it to be used in systems with varying memory requirements, from simple microcontroller applications to more complex embedded systems. Its surface-mount package and wide voltage range further enhance its applicability in a broad range of electronic devices.

Conclusion of M29F200BB70M6E

The M29F200BB70M6E is a robust and versatile Flash memory IC designed to meet the demands of high-performance applications. Its combination of fast access times, flexible memory configurations, and environmental compliance makes it a reliable choice for a variety of electronic systems. While the product is now obsolete, its legacy continues to influence the design of modern memory solutions. For those looking to integrate a reliable and efficient Flash memory into their designs, the M29F200BB70M6E remains a notable option, especially in applications where its unique features and performance benefits are highly valued.