Micron Technology
MT47H256M8EB-3:C TR

774-MT47H256M8EB-3:C TR
IC DRAM 2GBIT PARALLEL 60FBGA

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Tech Specifications

Clock Frequency
333 MHz
Operating Temperature
0°C ~ 85°C (TC)
Memory Interface
Parallel
ECCN
OBSOLETE
Memory Organization
256M x 8
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Obsolete
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MT47H256M8EB-3:C TR Description

MT47H256M8EB-3:C TR Description

The MT47H256M8EB-3:C TR is a high-performance, 2Gbit DRAM memory IC chip designed for demanding applications requiring fast data access and reliable performance. Manufactured by Micron Technology Inc., this memory IC chip features a parallel memory interface and is packaged in a surface-mount, 60FBGA format with tape and reel (TR) packaging. The MT47H256M8EB-3:C TR operates within a voltage range of 1.7V to 1.9V and supports a clock frequency of 333 MHz, ensuring efficient data transfer and processing.

MT47H256M8EB-3:C TR Features

  • Memory Organization: The MT47H256M8EB-3:C TR is organized as 256M x 8, providing a total memory size of 2Gbit. This configuration ensures efficient memory utilization and high data throughput.
  • Access Time: With an access time of 450 picoseconds, this DRAM IC offers extremely fast data retrieval, making it suitable for high-speed applications.
  • Write Cycle Time: The write cycle time for both word and page operations is 15 nanoseconds, ensuring rapid data writing and minimizing latency.
  • Operating Temperature: The operating temperature range of 0°C to 85°C (TC) makes this memory IC suitable for a wide range of environmental conditions, including industrial and consumer applications.
  • Moisture Sensitivity Level (MSL): The MSL rating of 3 (168 hours) indicates that the MT47H256M8EB-3:C TR is suitable for surface-mount assembly processes and can withstand typical manufacturing conditions.
  • RoHS Compliance: The MT47H256M8EB-3:C TR is ROHS3 compliant, ensuring that it meets environmental standards and regulations for the electronics industry.

MT47H256M8EB-3:C TR Applications

The MT47H256M8EB-3:C TR is ideal for applications that require high-speed data processing and reliable memory performance. Specific use cases include:

  • Networking Equipment: High-speed routers and switches benefit from the fast access times and large memory capacity of the MT47H256M8EB-3:C TR, enabling efficient data handling and routing.
  • Telecommunications: Base stations and other telecommunication infrastructure can leverage the parallel memory interface and high clock frequency to manage large volumes of data.
  • Consumer Electronics: High-performance gaming consoles and multimedia devices can utilize the MT47H256M8EB-3:C TR for fast data access and smooth operation.
  • Industrial Control Systems: The robust operating temperature range and moisture sensitivity level make this DRAM IC suitable for industrial control systems that require reliable performance in varying environmental conditions.

Conclusion of MT47H256M8EB-3:C TR

The MT47H256M8EB-3:C TR is a high-performance DRAM memory IC chip that offers significant advantages over similar models due to its fast access times, high clock frequency, and robust operating conditions. Despite being marked as obsolete, the MT47H256M8EB-3:C TR remains a viable option for applications requiring reliable and high-speed memory solutions. Its compatibility with various applications and compliance with industry standards make it a valuable component for engineers and designers in the electronics industry.

FAQ

What voltage specification is listed for MT47H256M8EB-3:C TR?
The listed voltage-related specification for MT47H256M8EB-3:C TR is 1.7V ~ 1.9V.
What is MT47H256M8EB-3:C TR?
Is MT47H256M8EB-3:C TR currently in stock?
Are there related or alternative parts for MT47H256M8EB-3:C TR?
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