Micron Technology_M29F200FB55N3F2 TR
Micron Technology_M29F200FB55N3F2 TR
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Micron Technology
M29F200FB55N3F2 TR

774-M29F200FB55N3F2 TR
PDF Datasheet
IC FLASH 2MBIT PARALLEL 48TSOP I

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Tech Specifications

Operating Temperature
-40°C ~ 125°C (TA)
Memory Interface
Parallel
ECCN
EAR99
Memory Organization
256K x 8, 128K x 16
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP I
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M29F200FB55N3F2 TR Description

M29F200FB55N3F2 TR Description

The M29F200FB55N3F2 TR is a high-performance, 2Mbit Flash memory IC designed by Micron Technology Inc. This memory chip is organized as 256K x 8 or 128K x 16, offering versatile memory configurations to suit various application requirements. It features a parallel memory interface, enabling efficient data transfer and high-speed performance. The M29F200FB55N3F2 TR operates within a supply voltage range of 4.5V to 5.5V and boasts an access time of 55 nanoseconds, ensuring rapid data retrieval. The write cycle time for both word and page operations is also 55 nanoseconds, making it highly efficient for write-intensive applications. The memory chip is packaged in a 48-pin TSOP (Thin Small Outline Package) and is available in a Tape & Reel (TR) format, ideal for surface mount assembly processes. While the product is marked as obsolete, it remains a reliable choice for legacy systems and specific applications where its performance characteristics are still highly valued.

M29F200FB55N3F2 TR Features

  • Memory Size and Organization: The M29F200FB55N3F2 TR offers a total memory capacity of 2Mbit, organized as 256K x 8 or 128K x 16. This flexible memory organization allows for efficient use of memory space and supports a variety of data storage needs.
  • Parallel Interface: The parallel memory interface ensures high-speed data transfer, making it suitable for applications requiring rapid data access and processing.
  • Fast Access Time: With an access time of 55 nanoseconds, the M29F200FB55N3F2 TR delivers quick data retrieval, enhancing overall system performance.
  • Write Cycle Efficiency: The write cycle time of 55 nanoseconds for both word and page operations ensures efficient data writing, making the chip suitable for applications involving frequent data updates.
  • Wide Supply Voltage Range: Operating within a supply voltage range of 4.5V to 5.5V, the M29F200FB55N3F2 TR offers flexibility in power supply requirements, making it compatible with a wide range of systems.
  • Surface Mount Compatibility: The 48-pin TSOP package and Tape & Reel (TR) format are ideal for surface mount assembly, ensuring ease of integration into modern electronic designs.
  • Compliance and Safety: The M29F200FB55N3F2 TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards for electronic components.

M29F200FB55N3F2 TR Applications

The M29F200FB55N3F2 TR is well-suited for a variety of applications where high-speed data access and efficient memory organization are critical. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems requiring fast data retrieval and efficient memory usage, such as industrial control systems and automotive electronics.
  • Telecommunications: Suitable for applications in the telecommunications industry, where rapid data processing and storage are essential for maintaining system performance.
  • Consumer Electronics: Can be used in consumer electronics devices that require reliable and fast memory solutions, such as digital cameras and gaming consoles.
  • Legacy Systems: Given its obsolete status, the M29F200FB55N3F2 TR remains a valuable component for maintaining and upgrading legacy systems where its performance characteristics are still highly relevant.

Conclusion of M29F200FB55N3F2 TR

The M29F200FB55N3F2 TR from Micron Technology Inc. is a robust and efficient 2Mbit Flash memory IC designed for high-speed data access and reliable performance. Despite being marked as obsolete, its technical specifications and performance benefits make it a valuable component for specific applications and legacy systems. With its fast access time, efficient write cycle, and flexible memory organization, the M29F200FB55N3F2 TR continues to offer significant advantages over similar models. Its compliance with environmental and safety standards further ensures its suitability for modern electronic designs. For applications requiring a reliable and high-performance Flash memory solution, the M29F200FB55N3F2 TR remains a compelling choice.

FAQ

What operating temperature range does M29F200FB55N3F2 TR support?
M29F200FB55N3F2 TR has an operating temperature range of -40°C ~ 125°C (TA).
Are there related or alternative parts for M29F200FB55N3F2 TR?
What is M29F200FB55N3F2 TR?
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