Micron Technology_M29F800FT55N3E2
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Micron Technology
M29F800FT55N3E2

774-M29F800FT55N3E2
PDF Datasheet
IC FLASH 8MBIT PARALLEL 48TSOP I

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Tech Specifications

Part Status Code
Obsolete
Component Density
8Mb
I/O Voltage
5.0 VOLTS
Number of Components
1
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP I
Access Time
55 ns
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M29F800FT55N3E2 Description

M29F800FT55N3E2 Description

The M29F800FT55N3E2 is a high-performance flash memory IC chip manufactured by Micron Technology Inc., designed for a wide range of embedded systems and applications requiring reliable non-volatile storage. This device features an 8Mbit memory size, organized as 1M x 8 or 512K x 16, and operates with a parallel memory interface. It is housed in a 48-pin TSOP package, suitable for surface mount applications, and is specified to operate within a supply voltage range of 4.5V to 5.5V. The M29F800FT55N3E2 offers a fast access time of 55 nanoseconds and a write cycle time of 55 nanoseconds for both word and page operations, ensuring efficient data handling and storage.

M29F800FT55N3E2 Features

  • Memory Organization: The M29F800FT55N3E2 is organized as 1M x 8 or 512K x 16, providing flexibility in memory configuration to suit various system requirements.
  • Parallel Interface: The parallel memory interface ensures high-speed data transfer and compatibility with a wide range of systems.
  • Fast Access and Write Times: With an access time of 55 nanoseconds and a write cycle time of 55 nanoseconds, this IC offers rapid data read and write capabilities, enhancing overall system performance.
  • Wide Voltage Range: The device operates within a supply voltage range of 4.5V to 5.5V, making it suitable for applications with varying power supply conditions.
  • Surface Mount Technology: The 48-pin TSOP package is designed for surface mount applications, providing a compact and reliable solution for modern electronic designs.
  • Compliance and Standards: The M29F800FT55N3E2 is RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance for global markets.
  • Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the device is suitable for use in environments with moderate humidity levels.

M29F800FT55N3E2 Applications

The M29F800FT55N3E2 is ideal for a variety of applications reliable where non-volatile memory is required. Its fast access and write times, combined with a flexible memory organization, make it suitable for:

  • Embedded Systems: Ideal for embedded systems requiring fast and reliable storage for firmware and critical data.
  • Industrial Control Systems: Provides robust storage solutions for industrial applications where data integrity and quick access are paramount.
  • Networking Equipment: Suitable for networking devices that require high-speed data storage and retrieval.
  • Consumer Electronics: Can be used in consumer electronics for storing configuration data and firmware updates.

Conclusion of M29F800FT55N3E2

The M29F800FT55N3E2 is a versatile and high-performance flash memory IC chip that offers significant advantages over similar models. Its fast access and write times, combined with a flexible memory organization and wide voltage range, make it an excellent choice for a variety of applications. Despite its obsolete product status, the M29F800FT55N3E2 remains a reliable and efficient solution for systems requiring non-volatile memory. Its compliance with environmental and regulatory standards ensures its suitability for global markets, making it a valuable component in modern electronic designs.

FAQ

What voltage specification is listed for M29F800FT55N3E2?
The listed voltage-related specification for M29F800FT55N3E2 is 4.5V ~ 5.5V.
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