Micron Technology_M29W128GH7AN6E
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Micron Technology
M29W128GH7AN6E

774-M29W128GH7AN6E
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IC FLASH 128MBIT PARALLEL 56TSOP

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Tech Specifications

Part Status Code
Obsolete
Component Density
128Mb
I/O Voltage
3.0 VOLTS
Number of Components
1
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
56-TSOP
Access Time
70 ns
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M29W128GH7AN6E Description

M29W128GH7AN6E Description

The M29W128GH7AN6E is a high-performance, 128Mbit parallel FLASH memory IC from Micron Technology Inc., designed for a wide range of applications requiring non-volatile storage. With a memory organization of 16M x 8 and 8M x 16, this device offers a versatile solution for various memory-intensive tasks. The M29W128GH7AN6E features a parallel memory interface, enabling fast data transfer and easy integration into existing systems. This device is surface mountable, making it suitable for use in compact and space-constrained applications.

M29W128GH7AN6E Features

  • Memory Size: 128Mbit (16M x 8, 8M x 16)
  • Memory Interface: Parallel
  • Access Time: 70 ns
  • Write Cycle Time - Word, Page: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Package: 56-Pin TSOP
  • Mounting Type: Surface Mount
  • Memory Format: FLASH
  • RoHS Status: ROHS3 Compliant
  • REACH Status: REACH Unaffected
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)

M29W128GH7AN6E Applications

The M29W128GH7AN6E is ideal for applications that require high-density, non-volatile storage with fast access times. Some specific use cases include:

  1. Industrial Control Systems: The M29W128GH7AN6E can be used for storing firmware and configuration data in industrial control systems, providing reliable and fast access to critical information.

  2. Automotive Infotainment Systems: This device can be used for storing maps, music, and other multimedia content in automotive infotainment systems, ensuring quick access and reliable performance.

  3. Embedded Systems: The M29W128GH7AN6E is suitable for use in embedded systems that require non-volatile storage for code and data, such as in IoT devices, wearables, and smart home applications.

  4. Portable Devices: This memory IC can be used in portable devices like digital cameras, MP3 players, and handheld gaming consoles, providing high-density storage for media files and user data.

Conclusion of M29W128GH7AN6E

The M29W128GH7AN6E is a versatile and high-performance parallel FLASH memory IC from Micron Technology Inc., offering a combination of high-density storage, fast access times, and reliable performance. Its unique features, such as the parallel memory interface and surface-mount packaging, make it an ideal choice for a wide range of applications, including industrial control systems, automotive infotainment, embedded systems, and portable devices. Despite being classified as obsolete, the M29W128GH7AN6E remains a valuable option for engineers and designers looking for a reliable and high-performance memory solution in their projects.

FAQ

What is the M29W128GH7AN6E, and what are its basic specifications?
A: The M29W128GH7AN6E is a 128-Mbit (128-megabit) parallel NOR Flash memory device, originally designed by Numonyx and later manufactured by Micron Technology. It is a non-volatile memory that can be read, erased, and reprogrammed using a single 2.7V to 3.6V low-voltage supply. The device features a fast 70 ns access time, making it suitable for high-speed embedded systems, and is housed in a standard 56-pin TSOP (Thin Small Outline Package).
How is the M29W128GH7AN6E's memory organized, and what architecture does it use?
How does the M29W128GH7AN6E interface with a microcontroller, and what are its key features?
What are the endurance and data retention specifications of the M29W128GH7AN6E?
What applications is the M29W128GH7AN6E intended for, and what is its current lifecycle status?
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