Micron Technology_M29W160EB70N6
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Micron Technology
M29W160EB70N6

774-M29W160EB70N6
PDF Datasheet
IC FLASH 16MBIT PARALLEL 48TSOP

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Tech Specifications

Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
Parallel
ECCN
EAR99
Memory Organization
2M x 8, 1M x 16
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP
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M29W160EB70N6 Description

 Product Overview

The M29W160EB70N6 is a high-speed, low-power, 16-Mbit (16-megabit) parallel NOR Flash memory . It is a non-volatile memory that retains stored information even when power is removed, and it can be read, erased, and reprogrammed in-system . The device is organized as either 2M x 8 bits (byte-wide) or 1M x 16 bits (word-wide) to provide flexibility for different data bus widths . The "EB" in the part number denotes a Bottom Boot Block architecture, where the boot block sector is located at the lowest memory addresses . This is ideal for systems that require the boot code to reside in a protected, reliable memory region.

🔧 Detailed Technical Specifications

  • Memory Technology: FLASH - NOR .

  • Memory Size: 16 Mbit (2 MB) .

  • Memory Organization: Configurable as 2M x 8 bits or 1M x 16 bits .

  • Memory Interface: Parallel .

  • Access Time: 70 ns (nanoseconds) .

  • Write Cycle Time: 70 ns for word/page .

  • Supply Voltage (Vcc): 2.7V to 3.6V .

  • Typical Programming Time: 10 µs per byte/word .

  • Erase/Program Cycles: 100,000 cycles per block .

  • Package: 48-pin TSOP (Thin Small Outline Package); also available in TFBGA48 .

  • Supply Current (Nominal): 10 mA .

  • Operating Temperature Range: Industrial grade, from -40°C to +85°C .

  • Mounting Type: Surface Mount (SMD) .

🔬 Key Architectural Features

  • Memory Blocks: The memory array is divided into 35 blocks for flexible erase operations:

    • 1 Boot Block (Top or Bottom location; M29W160EB features a Bottom Boot Block

    • 2 Parameter Blocks 

    • 32 Main Blocks 

  • Performance Features:

    • Program/Erase Controller: An on-chip controller manages all programming sequences internally .

    • Erase Suspend and Resume Modes: Allows the system to read from or program another block while an erase operation is suspended, enabling more responsive system design .

    • Unlock Bypass Programming: A command that speeds up production and batch programming .

  • Security & Identification:

    • Common Flash Interface (CFI): Allows software to read device parameters and features automatically .

    • 64-bit Security Code: Provides a unique identifier for each device .

    • Electronic Signature: The manufacturer code is 0x0020, and the bottom boot device code (for M29W160EB) is 0x2249 .

    • Temporary Block Unprotection Mode: Temporarily disables block protection for programming or erasing .

  • Power Management: Features standby and automatic standby modes for low power consumption .

⚠️ Important Lifecycle and Status Information

  • Part Status: Obsolete. This product is no longer in active production .

  • Lead (Pb) Status: Lead-free and RoHS compliant. Designed to be environmentally friendly .

  • Package: Tray. The device is shipped in tray packaging .

  • Discontinued Manufacturer: The original manufacturer is STMicroelectronics, but production has been transferred to Numonyx and subsequently to Micron Technology .

FAQ

Is the M29W160EB70N6 still in production, and what applications is it intended for?
A: The M29W160EB70N6 has been declared obsolete (End‑of‑Life) by its manufacturer and is no longer in active production. It remains available only from distributors or third‑party sellers with limited stock and is not recommended for new designs. When it was in production, the device was widely used in consumer electronics, automotive applications, industrial control systems, and networking equipment. Applications included firmware and boot code storage, configuration parameter retention, and data logging where a direct parallel processor bus interface was required.
What are the endurance and data retention specifications of the M29W160EB70N6?
How is the memory array organized and what does "EB" signify?
What are the key features and technical specifications of the M29W160EB70N6?
What is the M29W160EB70N6?
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