Micron Technology_M29W256GL70N6E
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Micron Technology
M29W256GL70N6E

774-M29W256GL70N6E
PDF Datasheet
IC FLASH 256MBIT PARALLEL 56TSOP

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Tech Specifications

Program Current (mA)
20
Part Status Code
Obsolete
Component Density
256Mb
Programming Voltage (V)
11.5 to 12.5|2.7 to 3.6
Number of Components
1
PPAP
No
Operating Current (mA)
10
Memory Type
Non-Volatile
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M29W256GL70N6E Description

M29W256GL70N6E Description

The M29W256GL70N6E is a high-performance flash memory IC designed by Micron Technology Inc., a leading manufacturer in the semiconductor industry. This device features a parallel memory interface and is organized as 32M x 8 or 16M x 16, providing a total memory size of 256 Mbit. It is housed in a surface-mount 56TSOP package, which is ideal for space-constrained applications. The M29W256GL70N6E operates within a voltage range of 2.7V to 3.6V and offers an access time of 70 ns, ensuring rapid data retrieval. Additionally, it has a write cycle time of 70 ns for both word and page operations. This IC is verified for DigiKey programmability, making it highly adaptable for various programming needs. Despite being marked as obsolete, the M29W256GL70N6E remains a reliable choice for legacy systems and specific applications where its unique features are required.

M29W256GL70N6E Features

  • Memory Interface: Parallel, ensuring compatibility with a wide range of legacy systems and applications.
  • Memory Organization: Flexible 32M x 8 or 16M x 16 configurations, allowing for optimized memory usage based on specific system requirements.
  • Access Time: Fast 70 ns access time, enabling quick data retrieval and enhancing overall system performance.
  • Write Cycle Time: Efficient 70 ns write cycle time for both word and page operations, ensuring rapid data storage.
  • Voltage Range: Operates within a 2.7V to 3.6V supply voltage range, providing flexibility in power supply design.
  • Package Type: Surface-mount 56TSOP package, suitable for compact and high-density PCB layouts.
  • Programmability: Verified DigiKey programmability, offering ease of customization and adaptation for various applications.
  • Compliance: ROHS3 compliant and REACH unaffected, ensuring environmental safety and regulatory adherence.
  • Moisture Sensitivity Level: MSL 3 (168 hours), making it suitable for standard manufacturing processes without requiring special handling.

M29W256GL70N6E Applications

The M29W256GL70N6E is ideal for applications requiring high-speed, reliable flash memory solutions. Its parallel interface and fast access times make it particularly suitable for:

  • Embedded Systems: Providing non-volatile storage for firmware and critical data in embedded devices.
  • Industrial Automation: Ensuring robust and rapid data access in industrial control systems and PLCs.
  • Telecommunications: Storing configuration data and firmware in communication equipment.
  • Consumer Electronics: Offering reliable storage solutions in devices such as digital cameras and gaming consoles.
  • Legacy Systems: Maintaining compatibility with older systems that rely on parallel flash memory interfaces.

Conclusion of M29W256GL70N6E

The M29W256GL70N6E from Micron Technology Inc. stands out as a reliable and high-performance flash memory IC, despite its obsolete status. Its fast access times, efficient write cycle times, and flexible memory organization make it a valuable component for applications requiring rapid data retrieval and storage. The surface-mount 56TSOP package ensures it fits seamlessly into modern PCB designs, while its compliance with environmental standards ensures it meets regulatory requirements. Although newer technologies have emerged, the M29W256GL70N6E remains a viable option for specific applications where its unique features and compatibility with legacy systems are essential.

FAQ

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