Micron Technology_M29W640GT70NB6E
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Micron Technology
M29W640GT70NB6E

774-M29W640GT70NB6E
IC FLASH 64MBIT PARALLEL 56TSOP

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Tech Specifications

Part Status Code
Obsolete
Component Density
64Mb
I/O Voltage
3.0 VOLTS
Number of Components
1
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
56-TSOP
Access Time
70 ns
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M29W640GT70NB6E Description

M29W640GT70NB6E Description

The M29W640GT70NB6E is a high-performance, 64 Mbit Flash memory IC designed by Micron Technology Inc. This device is organized as 8M x 8 or 4M x 16, offering versatile memory configurations to suit a variety of applications. The memory interface is parallel, ensuring fast data transfer rates and efficient performance. With an access time of 70 ns and a write cycle time of 70 ns, this IC delivers rapid read and write operations, making it suitable for demanding applications requiring quick data processing.

The M29W640GT70NB6E operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements. It is available in a 56TSOP package, which is ideal for surface-mount applications, ensuring reliable and compact integration into modern electronic designs. The device is classified under the HTSUS code 8542.32.0071 and is packaged in trays for convenient handling and storage.

M29W640GT70NB6E Features

  • Memory Size: 64 Mbit, providing ample storage for firmware and data.
  • Memory Organization: Flexible 8M x 8 or 4M x 16 configurations to match specific application needs.
  • Access Time: Fast 70 ns access time ensures quick data retrieval.
  • Write Cycle Time: 70 ns write cycle time for efficient data writing.
  • Voltage Range: 2.7V to 3.6V, offering compatibility with a range of power supplies.
  • Mounting Type: Surface mount, ideal for compact and reliable integration.
  • Package: 56TSOP, suitable for high-density applications.
  • Moisture Sensitivity Level (MSL): Level 3 (168 hours), ensuring robustness in various environmental conditions.
  • Compliance: REACH unaffected and ROHS3 compliant, meeting stringent environmental and safety standards.
  • Manufacturer: Micron Technology Inc., a leading provider of advanced semiconductor solutions.

M29W640GT70NB6E Applications

The M29W640GT70NB6E is well-suited for applications requiring fast, reliable, and compact Flash memory solutions. Its high-speed access and write times make it ideal for embedded systems, industrial controls, and communication devices. The flexible memory organization and wide voltage range further enhance its versatility, allowing it to be used in a broad range of electronic devices.

Specific use cases include:

  • Embedded Systems: For storing firmware and critical data in devices such as routers, modems, and IoT gateways.
  • Industrial Controls: In programmable logic controllers (PLCs) and automation systems where quick data access and reliability are paramount.
  • Communication Devices: For firmware storage in devices like switches, hubs, and network interfaces.
  • Consumer Electronics: In devices such as digital cameras, e-readers, and portable media players where compact and efficient memory solutions are required.

Conclusion of M29W640GT70NB6E

The M29W640GT70NB6E is a robust and versatile Flash memory IC designed to meet the demands of modern electronic applications. Its fast access and write times, combined with flexible memory configurations and compact packaging, make it an ideal choice for a wide range of devices. Despite its obsolete status, the M29W640GT70NB6E continues to offer reliable performance and compliance with industry standards, ensuring its continued relevance in the electronics industry.

FAQ

What operating temperature range does M29W640GT70NB6E support?
M29W640GT70NB6E has an operating temperature range of -40°C ~ 85°C (TA).
What package or case is M29W640GT70NB6E available in?
Is M29W640GT70NB6E currently in stock?
What voltage specification is listed for M29W640GT70NB6E?
What is the mounting type of M29W640GT70NB6E?
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