Micron Technology Tariff Inquiry

MT28EW01GABA1HPC-0SIT

Product Overview

The Micron MT28EW01GABA1HPC-0SIT is a high‑density parallel NOR Flash memory organized as 64M × 16 bits (1 Gb density). It operates from a 2.7 V – 3.6 V power supply and features a fast 110 ns maximum access time, enabling high‑speed read operations for code execution and data storage. Housed in a 64‑ball BGA package (11×13 mm), this device supports asynchronous read, program, and erase operations with sector (64 KB) and block (128 KB) erase flexibility. The "SIT" suffix denotes an industrial temperature range (–40°C to +85°C) and AEC‑Q100 qualification, making it ideal for automotive, industrial, and networking applications that require reliable, long‑term non‑volatile memory for boot code, firmware, and execute‑in‑place (XIP) operations.

• Density: 1 Gb (128 MB)
• Organization: 64M × 16 (x16 bus)
• Sector Size: 64 KB (uniform)
• Block Size: 128 KB
• Number of Sectors: 2,048
• Page Buffer: 16 words (for programming)

• Access Time (tACC): 110 ns (max)
• Page Read (tPACC): 25 ns (max)
• Program Time (word): 15 µs (typical)
• Sector Erase Time: 0.6 s (typical)
• Block Erase Time: 1.2 s (typical)

• VCC: 2.7 V – 3.6 V
• VIOQ: 1.65 V – 3.6 V
• Standby Current: 5 µA (max)
• Read Current: 25 mA (max)
• Package: 64‑ball BGA (11 × 13 × 1.00 mm)
• Ball Pitch: 0.80 mm
• Operating Temp: –40°C to +85°C (SIT)

• ✓ AEC‑Q100 qualified (SIT grade)
• ✓ Industrial temperature –40°C to +85°C
• ✓ Asynchronous read/write interface
• ✓ Sector and block erase flexibility
• ✓ Program/Erase suspend for real‑time responsiveness
• ✓ Write protection via WP# and block locking
• ✓ Extended cycle endurance – 100K program/erase cycles