MT28EW256ABA1LJS-0SIT
Micron Technology_MT28EW256ABA1LJS-0SIT
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Micron Technology
MT28EW256ABA1LJS-0SIT

774-MT28EW256ABA1LJS-0SIT
PDF Datasheet
IC FLASH 256MBIT PARALLEL 56TSOP
20 weeks

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Tech Specifications

Mfr
Micron Technology Inc.
Series
-
Packaging
Tray
Part Status
Active
Memory Type
Non-Volatile
Memory Format
FLASH
Technology
FLASH - NOR
Memory Size
256Mbit
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MT28EW256ABA1LJS-0SIT Description

Micron Technology ● Parallel NOR Flash Memory ✓ Active • Industrial Temp
■
NOR · 256 Mb
TSOP-56 / BGA
RoHS Halogen-Free CFI Compliant 0SIT (Ind.)
High‑Performance Parallel NOR Flash

MT28EW256ABA1LJS-0SIT

★ 0SIT (Industrial) • 256 Mb (32 MB) • x8/x16 • –40°C to +85°C

256 Mb Parallel NOR Flash with 1.8 V core, offering 70 ns read access and page‑mode operation. Supports Common Flash Interface (CFI), uniform 64 KB sectors, and is qualified for industrial temperature range (–40°C to +85°C) – ideal for code storage and execute‑in‑place (XIP) in harsh environments.

Memory Density
256 Mb (32 MB)
Organization
32M x 8 / 16M x 16
Read Access Time (max)
70 ns (page mode)
Voltage (VCC)
1.7 V – 2.0 V
Package Options
TSOP-56 (14x20 mm) / BGA-64
Operating Temperature
–40 °C to +85 °C (Industrial)
Interface
Parallel (asynchronous/page)
Sector Size
64 KB (uniform)
Program Time (typ)
10 µs (word) / 6 ms (page)
Erase Time (sector)
0.8 s (typ)
Endurance
100,000 cycles
Data Retention
20 years

Technical Highlights

  • Fast Read & XIP Capable: 70 ns access time with page‑mode read (16‑word page) enables zero‑wait‑state code execution directly from flash.
  • CFI & JEDEC Standard: Common Flash Interface allows software to auto‑detect memory parameters, simplifying firmware development and platform migration.
  • Industrial‑Grade Reliability: The "0SIT" suffix guarantees operation from –40°C to +85°C with enhanced data retention and endurance for demanding applications.
  • Advanced Protection: Supports block lock/unlock, password protection, and volatile/non‑volatile protection bits to safeguard critical code.

Key Electrical & Timing Specs

VCC (typ) 1.8 V
VCCQ (I/O) 1.8 V (1.7–2.0 V)
ICC read (max) 22 mA
ICC program (max) 28 mA
ICC erase (max) 28 mA
ICC standby (typ) 1 µA
tRC (read cycle) 70 ns
tWC (write cycle) 70 ns
tACC (access) 70 ns

Typical values at 25°C, VCC = 1.8 V. Refer to the full datasheet for guaranteed limits.

🚀 Key Applications
  • Industrial Control & Automation
  • Automotive ECUs & Body Electronics
  • Telecom & Networking Gear
  • Medical Devices & Instrumentation
  • Embedded Boot Code & Firmware
⚡ Key Benefits
  • High‑speed random read for instant boot
  • Ultra‑low standby power (1 µA)
  • Wide temperature range for harsh environments
  • Uniform sector architecture simplifies updates
  • Green package (Pb‑free, halogen‑free)
■ Packaging: Tray & Tape/Reel ■ MSL: Level 3 (260°C) ■ Moisture Sensitivity: 168 hours
● Available in standard quantities
✓ 100% Original Micron Silicon ✓ Halogen-free / RoHS 2015/863 ✓ Full traceability & Certificate of Conformance ✓ Industrial grade with extended life cycle
© 2026 Micron Technology, Inc. • MT28EW256ABA1LJS-0SIT • Preliminary specifications – subject to change without notice.
All data based on typical conditions. For latest information, consult the official Micron datasheet.

FAQ

What type of memory is the MT28EW256ABA1LJS-0SIT, and what are its key specifications?
A1: This is a Micron Parallel NOR Flash memory device built on SLC (Single-Level Cell) process technology. Key specifications include: Parameter Detail Density 256 Mb (32M × 8 / 16M × 16 configurable) Bus Width x8 / x16 configurable Interface Parallel (asynchronous) Access Time 75 ns (max) Page Access Time 20 ns Write Cycle Time (Word, Page) 60 ns Supply Voltage (VCC) 2.7V – 3.6V I/O Voltage (VCCQ) 1.65V – VCC Package 56-pin TSOP (14.00 × 20.00 × 1.20 mm) Technology FLASH – NOR
What are the operating voltage and temperature range for this device?
What are the typical applications and key features of this device?
What are the packaging options and part status?
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