Micron Technology_MT29F2G08ABBEAHC:E TR
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Micron Technology
MT29F2G08ABBEAHC:E TR

774-MT29F2G08ABBEAHC:E TR
IC FLASH 2GBIT PARALLEL 63VFBGA

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Tech Specifications

Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
256M x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
63-VFBGA (10.5x13)
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MT29F2G08ABBEAHC:E TR Description

MT29F2G08ABBEAHC:E TR Description

The MT29F2G08ABBEAHC:E TR is a high-performance, 2Gbit Flash memory IC designed for a wide range of applications requiring reliable and efficient data storage. Manufactured by Micron Technology Inc., this memory IC features a parallel memory interface, providing fast data transfer rates and ensuring compatibility with various systems. The device is housed in a 63-ball fine-pitch BGA package, which is ideal for surface-mount applications, ensuring robust mechanical stability and excellent thermal performance.

MT29F2G08ABBEAHC:E TR Features

  • Memory Size and Organization: With a memory size of 2Gbit organized as 256M x 8, the MT29F2G08ABBEAHC:E TR offers substantial storage capacity in a compact form factor. This organization allows for efficient data management and high-speed access.
  • Operating Temperature: The device operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for industrial and consumer applications where environmental conditions may vary.
  • Voltage Supply: The memory IC operates on a voltage supply of 1.7V to 1.95V, ensuring low power consumption and compatibility with modern low-voltage systems.
  • Moisture Sensitivity Level (MSL): Rated at MSL 3 (168 hours), the MT29F2G08ABBEAHC:E TR is designed to withstand moderate levels of moisture, enhancing its reliability in various environmental conditions.
  • Compliance and Standards: The MT29F2G08ABBEAHC:E TR is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and safety standards. It also carries an ECCN classification of 3A991B1A and an HTSUS code of 8542.32.0071, facilitating compliance with international trade regulations.
  • Packaging: The device is packaged in a tape and reel (TR) format, which is ideal for automated assembly processes, ensuring high production efficiency and reduced handling errors.

MT29F2G08ABBEAHC:E TR Applications

The MT29F2G08ABBEAHC:E TR is well-suited for a variety of applications that demand high-density, non-volatile memory solutions. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems requiring fast and reliable data storage, such as automotive infotainment systems, industrial control units, and IoT devices.
  • Consumer Electronics: Suitable for consumer electronics like smartphones, tablets, and digital cameras, where compact size and high storage capacity are critical.
  • Industrial Applications: The robustness and reliability of the MT29F2G08ABBEAHC:E TR make it a preferred choice for industrial applications, including PLCs, SCADA systems, and factory automation equipment.
  • Networking and Communication: Beneficial for networking and communication devices, such as routers, switches, and base stations, where data integrity and quick access are essential.

Conclusion of MT29F2G08ABBEAHC:E TR

The MT29F2G08ABBEAHC:E TR from Micron Technology Inc. is a versatile and high-performance Flash memory IC that offers significant advantages over similar models. Its 2Gbit storage capacity, parallel memory interface, and low power consumption make it an ideal choice for a wide range of applications. The device's compliance with environmental and safety standards, along with its robust packaging, ensures it meets the demands of modern electronics manufacturing. Despite being marked as obsolete, the MT29F2G08ABBEAHC:E TR remains a reliable and efficient solution for applications requiring non-volatile memory.

FAQ

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