Micron Technology_MT44K32M18RB-093E:A
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Micron Technology
MT44K32M18RB-093E:A

774-MT44K32M18RB-093E:A
PDF Datasheet
IC DRAM 576MBIT PAR 168BGA

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Tech Specifications

Mfr
Micron Technology Inc.
Series
-
Packaging
Tray
Part Status
Obsolete
Memory Type
Volatile
Memory Format
DRAM
Technology
DRAM
Memory Size
576Mbit
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MT44K32M18RB-093E:A Description

MT44K32M18RB-093E:A Description

The MT44K32M18RB-093E:A is a high-performance 576Mbit (32M x 18) volatile DRAM from Micron Technology Inc., designed for applications requiring high-speed parallel memory access. Operating at a clock frequency of 1.066 GHz with an 8 ns access time, this DRAM module delivers efficient data throughput for demanding computing environments. It features a 1.28V to 1.42V supply voltage range, ensuring low power consumption while maintaining robust performance. The device is packaged in a 168-ball BGA (Tray), making it suitable for surface-mount applications in space-constrained designs. Although marked as Obsolete, it remains a reliable choice for legacy systems requiring high-density memory solutions.

MT44K32M18RB-093E:A Features

  • Memory Organization: 32M x 18 configuration, offering 576Mbit density for high-capacity storage needs.
  • High-Speed Performance: 1.066 GHz clock frequency and 8 ns access time enable rapid data processing.
  • Low Power Operation: 1.28V–1.42V supply range optimizes energy efficiency in power-sensitive applications.
  • Robust Construction: RoHS3 Compliant and REACH Unaffected, meeting stringent environmental standards.
  • Wide Temperature Range: Operates reliably from 0°C to 95°C (TC), suitable for industrial and embedded systems.
  • Parallel Interface: Ensures compatibility with legacy systems requiring high-bandwidth memory access.
  • Moisture Sensitivity Level (MSL) 3: Requires careful handling but supports extended storage (168 hours) under controlled conditions.

MT44K32M18RB-093E:A Applications

  • Embedded Systems: Ideal for industrial controllers, medical devices, and automotive electronics requiring stable, high-speed memory.
  • Legacy Computing: Supports older servers, networking equipment, and telecommunications infrastructure.
  • High-Performance Storage: Used in buffer memory applications for SSDs, RAID controllers, and data acquisition systems.
  • Military/Aerospace: Suitable for ruggedized systems due to its wide operating temperature range and reliability.

Conclusion of MT44K32M18RB-093E:A

The MT44K32M18RB-093E:A is a high-density, high-speed DRAM solution tailored for legacy and specialized applications. Its parallel interface, low-voltage operation, and industrial-grade temperature tolerance make it a versatile choice for embedded and high-performance systems. While obsolete, its 576Mbit capacity and 1.066 GHz performance ensure it remains relevant in niche markets. Engineers seeking a reliable, high-bandwidth memory IC for demanding environments will find this Micron DRAM a compelling option.

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