Micron Technology_MT29E1T08CUCBBH8-6:B TR
Micron Technology_MT29E1T08CUCBBH8-6:B TR
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Micron Technology
MT29E1T08CUCBBH8-6:B TR

774-MT29E1T08CUCBBH8-6:B TR
IC FLASH 1TB PARALLEL 152LBGA

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Tech Specifications

Clock Frequency
167 MHz
Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
OBSOLETE
Memory Organization
128G x 8
Mounting Type
-
Memory Type
Non-Volatile
Product Status
Obsolete
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MT29E1T08CUCBBH8-6:B TR Description

MT29E1T08CUCBBH8-6:B TR Description

The MT29E1T08CUCBBH8-6:B TR is a high-performance memory IC chip manufactured by Micron Technology Inc. This device is designed to deliver exceptional storage capacity and data transfer speeds, making it ideal for a wide range of applications requiring large-scale data storage and rapid access. The MT29E1T08CUCBBH8-6:B TR features a 1Tbit (128G x 8) memory organization, providing a substantial amount of storage space in a compact form factor. It operates with a clock frequency of 167 MHz, ensuring fast data processing and retrieval. The memory interface is parallel, which is known for its simplicity and reliability in various electronic systems. The device is packaged in a Tape & Reel (TR) format, facilitating easy handling and integration into manufacturing processes.

MT29E1T08CUCBBH8-6:B TR Features

  • High Memory Capacity: With a memory size of 1Tbit (128G x 8), the MT29E1T08CUCBBH8-6:B TR offers significant storage capabilities, making it suitable for applications requiring large data sets.
  • Fast Data Access: The 167 MHz clock frequency ensures rapid data processing and retrieval, enhancing overall system performance.
  • Flexible Voltage Range: The device operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements and compatibility with various electronic systems.
  • Wide Operating Temperature Range: The MT29E1T08CUCBBH8-6:B TR is designed to operate within a temperature range of 0°C to 70°C (TA), making it suitable for use in a variety of environmental conditions.
  • Parallel Memory Interface: The parallel memory interface simplifies integration into existing systems and ensures reliable data transfer.
  • Moisture Sensitivity Level: With an MSL of 3 (168 Hours), the device is well-suited for manufacturing processes that require protection from moisture.
  • RoHS3 Compliant: The MT29E1T08CUCBBH8-6:B TR meets the stringent environmental standards of RoHS3, ensuring compliance with global regulations and promoting sustainable manufacturing practices.

MT29E1T08CUCBBH8-6:B TR Applications

The MT29E1T08CUCBBH8-6:B TR is ideal for applications that demand high storage capacity and fast data access. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems requiring large amounts of non-volatile storage for firmware and data.
  • Industrial Control Systems: Suitable for industrial applications where reliable data storage and fast access are critical.
  • Networking Equipment: Enhances the performance of networking devices by providing fast and reliable data storage.
  • Consumer Electronics: Can be used in high-end consumer electronics where large storage and fast data processing are essential.

Conclusion of MT29E1T08CUCBBH8-6:B TR

The MT29E1T08CUCBBH8-6:B TR is a robust and versatile memory IC chip that offers high storage capacity and fast data access. Its parallel memory interface, wide operating temperature range, and RoHS3 compliance make it a reliable choice for a variety of applications. While the product is marked as obsolete, its unique features and performance benefits continue to make it a valuable component for specific use cases. For designers and engineers looking for a reliable and high-performance memory solution, the MT29E1T08CUCBBH8-6:B TR remains a compelling option.

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