Micron Technology
MT29E2T08CTCCBJ7-6:C  
Memory ICs Products

Micron Technology
MT29E2T08CTCCBJ7-6:C
774-MT29E2T08CTCCBJ7-6:C
IC FLASH 2TB PARALLEL 152LBGA
In Stock : 10204

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MT29E2T08CTCCBJ7-6:C Description

MT29E2T08CTCCBJ7-6:C Description

The MT29E2T08CTCCBJ7-6:C is a high-density 2Tbit (256G x 8) NAND flash memory device from Micron Technology, designed for demanding storage applications requiring parallel interface performance. Operating at a 167 MHz clock frequency with a 2.7V to 3.6V supply voltage, this surface-mount IC delivers robust data throughput and reliability in industrial and embedded systems. Organized in an 8-bit parallel configuration, it supports high-speed data transfers, making it suitable for applications where large-capacity, low-latency storage is critical. The device is housed in a 152-ball LBGA package and adheres to ECCN 3A991B1A for export compliance.

MT29E2T08CTCCBJ7-6:C Features

  • High-Capacity Storage: 2Tbit density (256G x 8) enables large-scale data retention for complex systems.
  • Parallel Interface: Optimized for 167 MHz operation, ensuring rapid read/write cycles.
  • Wide Voltage Range: 2.7V–3.6V operation enhances compatibility with diverse power architectures.
  • Industrial Temperature Range: Operates reliably from 0°C to 70°C, suitable for controlled environments.
  • Obsolete Status: While no longer in production, it remains a viable solution for legacy systems or specific BOM requirements.
  • Low Sensitivity: MSL 1 (Unlimited) ensures minimal moisture-related handling constraints during assembly.

MT29E2T08CTCCBJ7-6:C Applications

  • Enterprise Storage Systems: Ideal for RAID arrays, NAS, and server-grade storage due to high density and parallel throughput.
  • Embedded Computing: Suited for industrial PCs, telecommunication infrastructure, and data loggers requiring non-volatile memory.
  • Legacy Hardware Upgrades: Provides a drop-in replacement for older systems reliant on parallel NAND flash.
  • High-Performance Controllers: Used in SSDs and caching solutions where parallel interface speeds are prioritized over newer serial protocols.

Conclusion of MT29E2T08CTCCBJ7-6:C

The MT29E2T08CTCCBJ7-6:C offers a balance of high capacity, speed, and reliability for specialized storage needs. While obsolete, its parallel interface and industrial-grade specs make it a pragmatic choice for legacy upgrades or systems where newer NAND technologies are incompatible. Engineers should evaluate alternative Micron solutions for forward-looking designs but may leverage this device for niche applications requiring proven performance.

Tech Specifications

Clock Frequency
Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
Mfr
HTSUS
Package
Memory Format
Base Product Number
Moisture Sensitivity Level (MSL)

MT29E2T08CTCCBJ7-6:C Documents

Download datasheets and manufacturer documentation for MT29E2T08CTCCBJ7-6:C

Ersa Standard Pkg Label Chg 20/Feb/2019       Mult Devices 22/Feb/2018      

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