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MT29E2T08CTCCBJ7-6:C
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MT29E2T08CTCCBJ7-6:C Description
MT29E2T08CTCCBJ7-6:C Description
The MT29E2T08CTCCBJ7-6:C is a high-density 2Tbit (256G x 8) NAND flash memory device from Micron Technology, designed for demanding storage applications requiring parallel interface performance. Operating at a 167 MHz clock frequency with a 2.7V to 3.6V supply voltage, this surface-mount IC delivers robust data throughput and reliability in industrial and embedded systems. Organized in an 8-bit parallel configuration, it supports high-speed data transfers, making it suitable for applications where large-capacity, low-latency storage is critical. The device is housed in a 152-ball LBGA package and adheres to ECCN 3A991B1A for export compliance.
MT29E2T08CTCCBJ7-6:C Features
- High-Capacity Storage: 2Tbit density (256G x 8) enables large-scale data retention for complex systems.
- Parallel Interface: Optimized for 167 MHz operation, ensuring rapid read/write cycles.
- Wide Voltage Range: 2.7V–3.6V operation enhances compatibility with diverse power architectures.
- Industrial Temperature Range: Operates reliably from 0°C to 70°C, suitable for controlled environments.
- Obsolete Status: While no longer in production, it remains a viable solution for legacy systems or specific BOM requirements.
- Low Sensitivity: MSL 1 (Unlimited) ensures minimal moisture-related handling constraints during assembly.
MT29E2T08CTCCBJ7-6:C Applications
- Enterprise Storage Systems: Ideal for RAID arrays, NAS, and server-grade storage due to high density and parallel throughput.
- Embedded Computing: Suited for industrial PCs, telecommunication infrastructure, and data loggers requiring non-volatile memory.
- Legacy Hardware Upgrades: Provides a drop-in replacement for older systems reliant on parallel NAND flash.
- High-Performance Controllers: Used in SSDs and caching solutions where parallel interface speeds are prioritized over newer serial protocols.
Conclusion of MT29E2T08CTCCBJ7-6:C
The MT29E2T08CTCCBJ7-6:C offers a balance of high capacity, speed, and reliability for specialized storage needs. While obsolete, its parallel interface and industrial-grade specs make it a pragmatic choice for legacy upgrades or systems where newer NAND technologies are incompatible. Engineers should evaluate alternative Micron solutions for forward-looking designs but may leverage this device for niche applications requiring proven performance.



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