Micron Technology_MT29E2T08CUHBBM4-3ES:B TR
Micron Technology_MT29E2T08CUHBBM4-3ES:B TR
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Micron Technology
MT29E2T08CUHBBM4-3ES:B TR

774-MT29E2T08CUHBBM4-3ES:B TR
IC FLASH 2TBIT PARALLEL 333MHZ

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Tech Specifications

Clock Frequency
333 MHz
Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
256G x 8
Mounting Type
-
Memory Type
Non-Volatile
Product Status
Active
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MT29E2T08CUHBBM4-3ES:B TR Description

MT29E2T08CUHBBM4-3ES:B TR Description

The MT29E2T08CUHBBM4-3ES:B TR is a high-performance, 2Tbit FLASH memory IC designed for demanding applications requiring large storage capacities and fast data access speeds. Manufactured by Micron Technology Inc., this memory IC features a parallel memory interface and operates at a clock frequency of 333 MHz, ensuring rapid data transfer and processing capabilities. The device is housed in a Tape & Reel (TR) package, making it suitable for automated assembly processes and bulk handling.

MT29E2T08CUHBBM4-3ES:B TR Features

  • Memory Size and Organization: The MT29E2T08CUHBBM4-3ES:B TR offers a substantial 2Tbit memory size, organized as 256G x 8, providing ample storage for complex data sets and large-scale applications.
  • Clock Frequency: With a clock frequency of 333 MHz, this memory IC delivers high-speed data processing, making it ideal for applications that require quick access to large amounts of data.
  • Operating Temperature: The device operates reliably within a temperature range of 0°C to 70°C (TA), ensuring stable performance in a variety of environmental conditions.
  • Voltage Supply: The memory IC supports a voltage supply range of 2.5V to 3.6V, offering flexibility in power management and compatibility with various power supply systems.
  • Compliance and Standards: The MT29E2T08CUHBBM4-3ES:B TR is REACH unaffected and ROHS3 compliant, meeting stringent environmental and safety standards. It also adheres to the ECCN classification 3A991B1A and HTSUS code 8542.32.0071, ensuring compliance with international trade regulations.
  • Moisture Sensitivity Level: The device has a moisture sensitivity level (MSL) of 3 (168 hours), making it suitable for use in environments with varying humidity levels without compromising performance.

MT29E2T08CUHBBM4-3ES:B TR Applications

The MT29E2T08CUHBBM4-3ES:B TR is well-suited for a range of applications that demand high-speed, high-capacity memory solutions. These include:

  • Embedded Systems: Ideal for embedded systems in industrial automation, where large amounts of data need to be stored and accessed quickly.
  • Networking Equipment: Suitable for networking devices that require fast data retrieval and storage, such as routers and switches.
  • Consumer Electronics: Applicable in high-end consumer electronics like smart TVs and gaming consoles, where large storage and fast data processing are critical.
  • Automotive Systems: Can be used in advanced automotive systems for data logging, infotainment systems, and advanced driver-assistance systems (ADAS).

Conclusion of MT29E2T08CUHBBM4-3ES:B TR

The MT29E2T08CUHBBM4-3ES:B TR from Micron Technology Inc. stands out as a robust and versatile memory IC, offering a significant 2Tbit storage capacity and a high clock frequency of 333 MHz. Its parallel memory interface ensures efficient data transfer, making it a reliable choice for applications that demand both speed and capacity. The device's compliance with environmental and safety standards, along with its suitable operating temperature range and moisture sensitivity level, further enhance its appeal in various industrial and consumer applications. Whether used in embedded systems, networking equipment, consumer electronics, or automotive systems, the MT29E2T08CUHBBM4-3ES:B TR provides a reliable and high-performance memory solution that meets the demands of modern technology.

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