Micron Technology_MT29E512G08CEHBBJ4-3:B TR
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Micron Technology
MT29E512G08CEHBBJ4-3:B TR

774-MT29E512G08CEHBBJ4-3:B TR
IC FLASH 512GBIT PAR 132VBGA

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Tech Specifications

Clock Frequency
333 MHz
Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
64G x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
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MT29E512G08CEHBBJ4-3:B TR Description

MT29E512G08CEHBBJ4-3:B TR Description

The MT29E512G08CEHBBJ4-3:B TR is a high-performance, 512Gbit Flash memory IC designed for demanding applications requiring large storage capacities and fast data access. Manufactured by Micron Technology Inc., this device features a parallel memory interface, providing efficient data transfer rates and ensuring compatibility with a wide range of systems. The memory is organized in a 64G x 8 configuration, offering robust storage capabilities in a compact form factor.

MT29E512G08CEHBBJ4-3:B TR Features

  • Memory Size and Organization: The MT29E512G08CEHBBJ4-3:B TR boasts a substantial 512Gbit memory size, organized as 64G x 8, making it ideal for applications requiring extensive data storage.
  • Parallel Memory Interface: This interface ensures high-speed data transfer, crucial for applications demanding rapid read and write operations.
  • Operating Temperature Range: The device operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for a variety of environmental conditions.
  • Voltage Supply: The memory IC operates on a voltage supply range of 2.5V to 3.6V, providing flexibility in power management.
  • Clock Frequency: With a clock frequency of 333 MHz, the MT29E512G08CEHBBJ4-3:B TR ensures fast and efficient data processing.
  • Surface Mount Technology: The surface mount mounting type facilitates easy integration into modern PCB designs, enhancing reliability and reducing the risk of mechanical stress.
  • Moisture Sensitivity Level: MSL 3 (168 Hours) ensures the device remains protected during manufacturing processes, reducing the risk of moisture-related damage.
  • Compliance and Standards: The MT29E512G08CEHBBJ4-3:B TR is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards.
  • Packaging: Supplied in a tape and reel (TR) package, ensuring efficient handling and storage during manufacturing processes.

MT29E512G08CEHBBJ4-3:B TR Applications

The MT29E512G08CEHBBJ4-3:B TR is well-suited for a variety of applications, including:

  • Embedded Systems: Ideal for embedded systems requiring large storage capacities and fast data access, such as automotive infotainment systems and industrial control units.
  • Networking Equipment: Suitable for networking devices that need reliable and high-capacity storage for firmware and data logs.
  • Consumer Electronics: Applicable in consumer electronics like smart TVs and gaming consoles, where large storage and quick data retrieval are essential.
  • Industrial Automation: Beneficial in industrial automation systems for storing critical operational data and firmware updates.

Conclusion of MT29E512G08CEHBBJ4-3:B TR

The MT29E512G08CEHBBJ4-3:B TR from Micron Technology Inc. is a powerful Flash memory IC offering significant storage capacity and high-speed data transfer capabilities. Its robust technical specifications, including a parallel memory interface, wide operating temperature range, and compliance with environmental standards, make it a reliable choice for various applications. Despite being marked as obsolete, the MT29E512G08CEHBBJ4-3:B TR remains a valuable component for existing systems and legacy applications, ensuring continued performance and reliability.

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