Micron Technology

MT29F128G08CECBBH1-10IT:B TR

MT29F128G08CECBBH1-10IT:B TR Description

The MT29F128G08CECBBH1-10IT:B TR is an integrated circuit (IC) flash memory chip designed by Micron Technology Inc. This memory IC chip features a 128 Gbit (16 GB) capacity organized in a 16G x 8 configuration, offering substantial storage capabilities in a compact form factor. The device operates with a parallel memory interface, supporting a clock frequency of 100 MHz, which ensures high-speed data transfer and efficient performance in various applications.

The MT29F128G08CECBBH1-10IT:B TR is packaged in a surface-mount 100-via ball grid array (100VBGA) format, making it suitable for modern printed circuit board (PCB) designs that require high component density and reliable mechanical stability. The device operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements and compatibility with a wide range of electronic systems.

MT29F128G08CECBBH1-10IT:B TR Features

• Memory Size and Organization: The MT29F128G08CECBBH1-10IT:B TR boasts a 128 Gbit (16 GB) memory size, organized in a 16G x 8 configuration. This large capacity allows for the storage of significant amounts of data, making it ideal for applications requiring extensive memory resources.
• Parallel Memory Interface: The parallel memory interface supports a clock frequency of 100 MHz, enabling high-speed data transfer and efficient performance in various applications. This interface is well-suited for systems that require fast access to large amounts of data.
• Surface-Mount Packaging: The device is packaged in a surface-mount 100-via ball grid array (100VBGA) format, which is ideal for modern PCB designs. This packaging method ensures high component density and reliable mechanical stability, making it suitable for a wide range of electronic systems.
• Voltage Range: The MT29F128G08CECBBH1-10IT:B TR operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements and compatibility with a wide range of electronic systems.
• Moisture Sensitivity Level (MSL): The device has a moisture sensitivity level of 3 (168 hours), ensuring reliability and longevity in various environmental conditions.
• RoHS Compliance: The MT29F128G08CECBBH1-10IT:B TR is ROHS3 compliant, adhering to strict environmental regulations and ensuring the use of environmentally friendly materials in its construction.

MT29F128G08CECBBH1-10IT:B TR Applications

The MT29F128G08CECBBH1-10IT:B TR is ideal for a variety of applications that require high-capacity, high-speed memory solutions. Some specific use cases include:

• Consumer Electronics: The device is well-suited for consumer electronics such as smartphones, tablets, and digital cameras, where large amounts of data need to be stored and accessed quickly.
• Embedded Systems: The MT29F128G08CECBBH1-10IT:B TR is ideal for embedded systems in automotive, industrial, and medical applications, where reliable and high-performance memory is crucial.
• Networking and Telecommunications: The device's high-speed data transfer capabilities make it suitable for networking and telecommunications equipment, where fast access to large amounts of data is essential.
• Data Storage: The MT29F128G08CECBBH1-10IT:B TR can be used in data storage devices, providing a reliable and high-capacity storage solution for various applications.

Conclusion of MT29F128G08CECBBH1-10IT:B TR

The MT29F128G08CECBBH1-10IT:B TR is a high-capacity, high-speed flash memory IC chip that offers significant storage capabilities and efficient performance. Its parallel memory interface and surface-mount packaging make it suitable for a wide range of electronic systems, while its voltage range and moisture sensitivity level ensure reliability and longevity. Although the device is now obsolete, it remains a valuable component for applications requiring high-capacity, high-speed memory solutions.