Micron Technology_MT29F1T208ECHBBJ4-3RES:B TR
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Micron Technology
MT29F1T208ECHBBJ4-3RES:B TR

774-MT29F1T208ECHBBJ4-3RES:B TR
IC FLASH 1.125T PARALLEL 132VBGA

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Tech Specifications

Clock Frequency
333 MHz
Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
144G x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Active
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MT29F1T208ECHBBJ4-3RES:B TR Description

MT29F1T208ECHBBJ4-3RES:B TR Description

The MT29F1T208ECHBBJ4-3RES:B TR is a high-performance memory IC chip manufactured by Micron Technology Inc. This device is designed to deliver robust and reliable storage solutions for a variety of applications. With a memory size of 1.125Tbit and a memory organization of 144G x 8, it provides substantial storage capacity in a compact 132VBGA package. The memory format is FLASH, which ensures fast read and write speeds, making it ideal for applications requiring high-speed data access.

This IC operates within a voltage range of 2.5V to 3.6V and supports a clock frequency of 333 MHz, ensuring efficient data processing and low power consumption. The operating temperature range of 0°C to 70°C (TA) makes it suitable for a wide range of environmental conditions. The memory interface is parallel, which is advantageous for applications that require high data transfer rates.

The MT29F1T208ECHBBJ4-3RES:B TR is available in a surface mount type, packaged in tape & reel (TR), which is ideal for automated assembly processes. It has a moisture sensitivity level (MSL) of 3, allowing for a 168-hour exposure to ambient conditions before assembly. The product is compliant with REACH and ROHS3 standards, ensuring environmental and safety standards are met.

MT29F1T208ECHBBJ4-3RES:B TR Features

  • High Memory Capacity: With a memory size of 1.125Tbit and an organization of 144G x 8, this IC offers significant storage capabilities.
  • Fast Data Access: The parallel memory interface and 333 MHz clock frequency ensure rapid data read and write operations.
  • Wide Operating Temperature Range: Suitable for use in environments ranging from 0°C to 70°C (TA), making it versatile for various applications.
  • Low Power Consumption: Operates within a voltage range of 2.5V to 3.6V, contributing to energy efficiency.
  • Surface Mount Compatibility: Ideal for automated assembly processes, enhancing manufacturing efficiency.
  • Environmental Compliance: REACH unaffected and ROHS3 compliant, ensuring adherence to environmental and safety standards.
  • Moisture Sensitivity Level 3: Allows for 168 hours of exposure to ambient conditions before assembly, providing flexibility in manufacturing schedules.

MT29F1T208ECHBBJ4-3RES:B TR Applications

The MT29F1T208ECHBBJ4-3RES:B TR is well-suited for applications that require high-speed data access and substantial storage capacity. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems that require large storage capacities and fast data processing capabilities.
  • Networking Equipment: Suitable for networking devices where high-speed data transfer and reliable storage are critical.
  • Industrial Automation: Can be used in industrial automation systems that need robust and efficient data storage solutions.
  • Consumer Electronics: Applicable in consumer electronics where high memory capacity and fast access times are essential for performance.

Conclusion of MT29F1T208ECHBBJ4-3RES:B TR

The MT29F1T208ECHBBJ4-3RES:B TR is a high-performance memory IC chip that offers a combination of large storage capacity, fast data access, and environmental compliance. Its unique features, such as a wide operating temperature range and low power consumption, make it a versatile solution for various applications. The device's compliance with REACH and ROHS3 standards ensures it meets the necessary environmental and safety requirements. With its surface mount compatibility and moisture sensitivity level of 3, it is well-suited for modern manufacturing processes. Overall, the MT29F1T208ECHBBJ4-3RES:B TR is an excellent choice for applications requiring reliable and efficient memory solutions.

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