


Micron Technology
MT29F256G08CBCBBJ4-37ES:B TR
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
MT29F256G08CBCBBJ4-37ES:B TR Description
MT29F256G08CBCBBJ4-37ES:B TR Description
The MT29F256G08CBCBBJ4-37ES:B TR is a high-performance, 256Gbit Flash memory IC chip manufactured by Micron Technology Inc. This device is designed for demanding applications that require large storage capacities and fast data access speeds. The MT29F256G08CBCBBJ4-37ES:B TR features a parallel memory interface, providing efficient data transfer rates up to 267 MHz. It operates within a voltage range of 2.7V to 3.6V and is suitable for a wide range of operating temperatures from 0°C to 70°C (TA). The memory is organized as 32G x 8, offering a robust and scalable storage solution. The device is packaged in a surface-mount 132-ball BGA format, ensuring compact and reliable integration into modern electronic systems. The MT29F256G08CBCBBJ4-37ES:B TR is available in a tape and reel (TR) package, facilitating high-volume production and automated assembly processes.
MT29F256G08CBCBBJ4-37ES:B TR Features
- High Capacity Storage: With a memory size of 256Gbit, the MT29F256G08CBCBBJ4-37ES:B TR provides substantial storage capabilities, making it ideal for applications requiring large data sets.
- Fast Data Access: The parallel memory interface supports clock frequencies up to 267 MHz, ensuring rapid data transfer and minimal latency.
- Wide Operating Temperature Range: The device operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for a variety of environmental conditions.
- Flexible Voltage Range: The MT29F256G08CBCBBJ4-37ES:B TR supports a supply voltage range of 2.7V to 3.6V, providing compatibility with different power supply configurations.
- Robust Packaging: The 132-ball BGA package ensures a compact and reliable footprint, ideal for surface-mount applications.
- Compliance and Standards: The device is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
- Moisture Sensitivity Level: With an MSL of 3 (168 hours), the MT29F256G08CBCBBJ4-37ES:B TR is designed to withstand moisture exposure during manufacturing processes.
MT29F256G08CBCBBJ4-37ES:B TR Applications
The MT29F256G08CBCBBJ4-37ES:B TR is well-suited for a variety of applications that demand high-capacity, high-speed storage solutions. Key applications include:
- Embedded Systems: Ideal for embedded systems requiring large storage capacities and fast data access, such as industrial control systems, medical devices, and automotive electronics.
- Data Storage Devices: Suitable for solid-state drives (SSDs) and other data storage applications where high-density and reliable storage are critical.
- Consumer Electronics: Applicable in consumer electronics like gaming consoles, smart TVs, and high-end smartphones, where large storage and fast performance are essential.
- Networking Equipment: Useful in networking devices such as routers and switches, where rapid data processing and storage are required.
Conclusion of MT29F256G08CBCBBJ4-37ES:B TR
The MT29F256G08CBCBBJ4-37ES:B TR from Micron Technology Inc. stands out as a versatile and high-performance Flash memory IC chip. Its large storage capacity, fast data access speeds, and wide operating temperature range make it a reliable choice for a variety of demanding applications. The device's compliance with industry standards and its robust packaging further enhance its appeal for modern electronic systems. Whether used in embedded systems, data storage devices, consumer electronics, or networking equipment, the MT29F256G08CBCBBJ4-37ES:B TR offers a reliable and efficient storage solution that meets the needs of today's high-tech applications.



.png)















.png?x-oss-process=image/format,webp/resize,h_32)










