Micron Technology_MT29F2G08ABBGAM79A3WC1L
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Micron Technology
MT29F2G08ABBGAM79A3WC1L

774-MT29F2G08ABBGAM79A3WC1L
PDF Datasheet
IC FLASH 2GBIT PARALLEL DIE
2 Weeks

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Tech Specifications

Part Status Code
Production
I/O Voltage
1.8 VOLTS
Memory Type
Non-Volatile
Product Status
Active
Supplier Device Package
Die
Chip Density (bit)
2G
Package / Case
Die
Technology
FLASH - NAND
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MT29F2G08ABBGAM79A3WC1L Description

MT29F2G08ABBGAM79A3WC1L Description

The MT29F2G08ABBGAM79A3WC1L is a high-performance, 2Gbit Flash memory IC chip manufactured by Micron Technology Inc. This device is designed for applications requiring high-density, non-volatile storage solutions. The MT29F2G08ABBGAM79A3WC1L features a parallel memory interface, offering a memory organization of 256M x 8, which ensures efficient data transfer and storage capabilities. It operates within a voltage range of 1.7V to 1.95V and is suitable for use in environments with an operating temperature range of 0°C to 70°C (TA). The device is available in a surface-mount die package, making it ideal for compact and space-constrained designs. The product is REACH unaffected and RoHS3 compliant, ensuring it meets the latest environmental standards.

MT29F2G08ABBGAM79A3WC1L Features

  • High-Density Storage: With a memory size of 2Gbit, the MT29F2G08ABBGAM79A3WC1L provides ample storage capacity for applications requiring large amounts of non-volatile memory.
  • Parallel Interface: The parallel memory interface ensures fast data transfer rates, making it suitable for high-speed applications.
  • Efficient Power Management: Operating within a voltage range of 1.7V to 1.95V, this device offers efficient power consumption, ideal for battery-operated or power-sensitive applications.
  • Wide Operating Temperature Range: The device can operate within a temperature range of 0°C to 70°C (TA), making it suitable for a variety of environments.
  • Surface-Mount Die Package: The surface-mount die package allows for easy integration into compact and space-constrained designs.
  • Environmental Compliance: The MT29F2G08ABBGAM79A3WC1L is REACH unaffected and RoHS3 compliant, ensuring it meets the latest environmental standards and is suitable for global markets.
  • Moisture Sensitivity Level (MSL) 3: With an MSL of 3 (168 hours), the device is designed to withstand moisture exposure during manufacturing processes, reducing the risk of damage.

MT29F2G08ABBGAM79A3WC1L Applications

The MT29F2G08ABBGAM79A3WC1L is ideal for a variety of applications requiring high-density, non-volatile storage solutions. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems where compact size and high storage capacity are critical.
  • Consumer Electronics: Suitable for consumer electronics such as smartphones, tablets, and digital cameras, where fast data access and storage are essential.
  • Industrial Applications: The wide operating temperature range and moisture sensitivity level make it suitable for industrial applications where reliability and durability are paramount.
  • Automotive Systems: The device's robustness and compliance with environmental standards make it ideal for automotive systems where reliability and performance are crucial.

Conclusion of MT29F2G08ABBGAM79A3WC1L

The MT29F2G08ABBGAM79A3WC1L is a versatile and high-performance Flash memory IC chip that offers significant advantages over similar models. Its high-density storage capacity, efficient power management, and wide operating temperature range make it suitable for a variety of applications. The surface-mount die package and environmental compliance further enhance its appeal for modern electronics designs. Whether used in embedded systems, consumer electronics, industrial applications, or automotive systems, the MT29F2G08ABBGAM79A3WC1L provides reliable and efficient non-volatile storage solutions.

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