Micron Technology_MT29F2G16ABBEAH4-IT:E

Micron Technology
MT29F2G16ABBEAH4-IT:E  
Memory ICs Products

Micron Technology
MT29F2G16ABBEAH4-IT:E
774-MT29F2G16ABBEAH4-IT:E
IC FLASH 2GBIT PARALLEL 63VFBGA
In Stock : 54

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MT29F2G16ABBEAH4-IT:E Description

MT29F2G16ABBEAH4-IT:E Description

The MT29F2G16ABBEAH4-IT:E is a 2Gbit (128M x 16) NAND Flash memory device from Micron Technology, designed for high-performance embedded storage applications. Featuring a parallel interface, this surface-mount IC operates at a low voltage range of 1.7V to 1.95V, making it suitable for power-sensitive designs. Organized in a 16-bit wide configuration, it delivers efficient data throughput for demanding systems. Packaged in a 63VFBGA (Bulk), it complies with ROHS3 and REACH environmental standards, though it is marked as Obsolete in Micron's product lineup.

MT29F2G16ABBEAH4-IT:E Features

  • Memory Capacity: 2Gbit (256MB) organized as 128M x 16 for optimized data handling.
  • Low Power Operation: 1.7V–1.95V supply range enhances energy efficiency in portable and battery-powered devices.
  • Parallel Interface: Enables high-speed data transfers, ideal for applications requiring rapid read/write cycles.
  • Industrial-Grade Reliability: MSL3 (168 Hours) moisture sensitivity ensures robustness in varied environmental conditions.
  • Compact Form Factor: 63VFBGA package saves PCB space while maintaining thermal performance.
  • Compliance: Meets ECCN 3A991B1A and HTSUS 8542.32.0071 for international trade regulations.

MT29F2G16ABBEAH4-IT:E Applications

This NAND Flash memory is tailored for embedded systems requiring high-density, low-power storage, including:

  • Industrial Automation: Firmware storage for PLCs, HMIs, and control modules.
  • Consumer Electronics: Solid-state drives (SSDs), digital cameras, and set-top boxes.
  • Automotive Infotainment: Non-volatile memory for navigation and multimedia systems.
  • Networking Equipment: Boot code and configuration storage in routers/switches.
  • Legacy Systems: Suitable for designs requiring proven, stable flash technology.

Conclusion of MT29F2G16ABBEAH4-IT:E

While obsolete, the MT29F2G16ABBEAH4-IT:E remains a reliable choice for legacy or cost-sensitive projects leveraging parallel NAND Flash. Its low-voltage operation, high-density storage, and industrial compliance make it a viable option for embedded applications where newer alternatives may not be feasible. Engineers should evaluate lifecycle status but can benefit from its proven performance in data-intensive systems.

Tech Specifications

Operating Temperature
Memory Interface
ECCN
Memory Organization
Mounting Type
Memory Type
Product Status
Supplier Device Package
Series
Write Cycle Time - Word, Page
Memory Size
Package / Case
Technology
Voltage - Supply
REACH Status
Mfr
HTSUS
Package
Memory Format
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)

MT29F2G16ABBEAH4-IT:E Documents

Download datasheets and manufacturer documentation for MT29F2G16ABBEAH4-IT:E

Shopping Guide

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