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MT29F2T08CUHBBM4-3R:B

MT29F2T08CUHBBM4-3R:B Description

The MT29F2T08CUHBBM4-3R:B is a high-density 2Tbit (256G x 8) NAND Flash memory device from Micron Technology, designed for applications requiring large-scale, high-speed data storage. Operating at a clock frequency of 333 MHz, this parallel-interface flash memory delivers robust performance for data-intensive systems. With a supply voltage range of 2.5V to 3.6V and an operating temperature range of 0°C to 70°C, it is suitable for industrial and commercial environments. The device is packaged in bulk and complies with ECCN 3A991B1A and HTSUS 8542.32.0071 regulations, ensuring compatibility with global standards.

MT29F2T08CUHBBM4-3R:B Features

• High-Capacity Storage: 2Tbit (256G x 8) organization for large data volumes.
• High-Speed Performance: 333 MHz clock frequency enables rapid read/write operations.
• Wide Voltage Range: Operates at 2.5V–3.6V, offering flexibility in power-sensitive designs.
• Parallel Interface: Optimized for high-throughput data transfer in embedded systems.
• Industrial-Grade Reliability: REACH unaffected and compliant with stringent ECCN standards.
• Obsolete Status: While no longer in production, it remains a viable solution for legacy systems requiring proven technology.

MT29F2T08CUHBBM4-3R:B Applications

This flash memory is ideal for:

• Enterprise Storage Systems: High-capacity SSDs and RAID configurations.
• Embedded Computing: Data logging, industrial automation, and telemetry.
• Networking Equipment: Buffering and caching in routers/switches.
• Legacy Upgrades: Replacement for older parallel flash in medical and aerospace systems.
  Its high-speed parallel interface makes it particularly suited for applications where low-latency access and large-scale storage are critical.

Conclusion of MT29F2T08CUHBBM4-3R:B

The MT29F2T08CUHBBM4-3R:B offers a compelling combination of high density, speed, and reliability, making it a strong choice for legacy and specialized storage applications. While marked as obsolete, its performance characteristics ensure continued relevance in systems requiring parallel-interface flash memory. Engineers working on data-heavy embedded designs or retrofit projects will find this Micron device a dependable solution.