Micron Technology_MT29F32G08AFABAWP:B TR
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Micron Technology
MT29F32G08AFABAWP:B TR

774-MT29F32G08AFABAWP:B TR
IC FLASH 32GBIT PAR 48TSOP I

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Tech Specifications

Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
4G x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
48-TSOP I
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MT29F32G08AFABAWP:B TR Description

MT29F32G08AFABAWP:B TR Description

The MT29F32G08AFABAWP:B TR is a high-performance 32Gbit Flash memory IC designed by Micron Technology Inc. This device is part of the Memory ICs Products category and is housed in a 48TSOP package, making it suitable for surface-mount applications. The memory is organized as 4G x 8, providing a robust and efficient storage solution for various electronic systems. It operates within a voltage range of 2.7V to 3.6V and can function reliably within an operating temperature range of 0°C to 70°C (TA). The memory interface is parallel, ensuring fast data transfer rates and compatibility with a wide range of systems. The MT29F32G08AFABAWP:B TR is packaged in tape and reel (TR) format, which is ideal for automated assembly processes. This product is classified under ECCN 3A991B1A and HTSUS 8542.32.0071. It is also ROHS3 compliant, ensuring environmental sustainability. Despite its obsolescence, the MT29F32G08AFABAWP:B TR remains a reliable choice for applications requiring high-density flash memory.

MT29F32G08AFABAWP:B TR Features

  • High-Density Storage: With a memory size of 32Gbit, the MT29F32G08AFABAWP:B TR offers substantial storage capacity, making it ideal for applications requiring large data storage.
  • Parallel Interface: The parallel memory interface ensures high-speed data transfer, which is crucial for applications that require rapid access to stored data.
  • Wide Operating Voltage Range: The device operates reliably within a voltage range of 2.7V to 3.6V, providing flexibility in power supply design.
  • Robust Temperature Performance: The operating temperature range of 0°C to 70°C (TA) ensures the device can function effectively in various environmental conditions.
  • Surface-Mount Compatibility: The surface-mount mounting type and 48TSOP package make it suitable for modern, compact electronic designs.
  • Moisture Sensitivity Level: Classified as MSL 3 (168 Hours), the device is well-suited for manufacturing processes involving reflow soldering.
  • Environmental Compliance: ROHS3 compliance ensures that the device meets the latest environmental standards, making it suitable for eco-friendly applications.

MT29F32G08AFABAWP:B TR Applications

The MT29F32G08AFABAWP:B TR is ideal for a variety of applications that require high-density flash memory and fast data access. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems that require non-volatile memory for storing firmware and critical data.
  • Telecommunications: Suitable for telecom equipment that needs reliable storage for configuration data and logs.
  • Industrial Control: Can be used in industrial control systems where robustness and high storage capacity are essential.
  • Consumer Electronics: Applicable in consumer electronics such as digital cameras, media players, and smart devices that require large storage capacities.
  • Automotive Electronics: Suitable for automotive applications where reliable memory storage and fast data access are crucial.

Conclusion of MT29F32G08AFABAWP:B TR

The MT29F32G08AFABAWP:B TR from Micron Technology Inc. is a high-performance flash memory IC that offers a balance of high storage capacity, fast data transfer, and environmental compliance. Despite being marked as obsolete, its robust technical specifications and compatibility with various applications make it a reliable choice for designers and engineers. The device's wide operating voltage range, parallel interface, and surface-mount compatibility ensure it can be integrated into modern electronic systems with ease. Its ROHS3 compliance and moisture sensitivity level of MSL 3 (168 Hours) further enhance its suitability for a wide range of manufacturing processes. For applications requiring high-density flash memory and fast data access, the MT29F32G08AFABAWP:B TR remains a viable and efficient solution.

FAQ

What voltage specification is listed for MT29F32G08AFABAWP:B TR?
The listed voltage-related specification for MT29F32G08AFABAWP:B TR is 2.7V ~ 3.6V.
Does MT29F32G08AFABAWP:B TR have quantity-based pricing?
Is MT29F32G08AFABAWP:B TR currently in stock?
What package or case is MT29F32G08AFABAWP:B TR available in?
What is the mounting type of MT29F32G08AFABAWP:B TR?
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