Micron Technology_MT29F6T08ETHBBM5-3RES:B TR
Micron Technology_MT29F6T08ETHBBM5-3RES:B TR
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Micron Technology
MT29F6T08ETHBBM5-3RES:B TR

774-MT29F6T08ETHBBM5-3RES:B TR
IC FLASH 6TBIT PARALLEL 333MHZ

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Tech Specifications

Clock Frequency
333 MHz
Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
768G x 8
Mounting Type
-
Memory Type
Non-Volatile
Product Status
Active
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MT29F6T08ETHBBM5-3RES:B TR Description

MT29F6T08ETHBBM5-3RES:B TR Description

The MT29F6T08ETHBBM5-3RES:B TR is a high-performance memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This device is a 6Tbit FLASH memory IC with a parallel memory interface, offering a clock frequency of 333 MHz. It is packaged in a Tape & Reel (TR) format, making it suitable for automated assembly processes. The memory organization is 768G x 8, providing substantial storage capacity in a compact form factor. The operating temperature range is 0°C to 70°C (TA), ensuring reliable performance in a variety of environmental conditions. The device operates within a supply voltage range of 2.5V to 3.6V, making it compatible with a wide range of power supply systems.

MT29F6T08ETHBBM5-3RES:B TR Features

  • High-Capacity Storage: With a memory size of 6Tbit and a memory organization of 768G x 8, the MT29F6T08ETHBBM5-3RES:B TR offers significant storage capabilities, ideal for applications requiring large data sets.
  • Fast Data Access: The 333 MHz clock frequency ensures rapid data access and transfer, enhancing overall system performance.
  • Parallel Interface: The parallel memory interface allows for efficient data communication, making it suitable for systems requiring high-speed data processing.
  • Wide Operating Temperature Range: The device operates reliably within a temperature range of 0°C to 70°C (TA), making it suitable for both industrial and consumer applications.
  • Flexible Power Supply: The voltage range of 2.5V to 3.6V provides flexibility in power supply design, accommodating various power systems.
  • Compliance and Reliability: The MT29F6T08ETHBBM5-3RES:B TR is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards. It also has a moisture sensitivity level (MSL) of 3 (168 hours), enhancing its reliability in manufacturing processes.

MT29F6T08ETHBBM5-3RES:B TR Applications

The MT29F6T08ETHBBM5-3RES:B TR is well-suited for a variety of applications due to its high capacity, fast data access, and reliability. Key applications include:

  • Data Storage Systems: Ideal for large-scale data storage systems requiring high-density memory solutions.
  • Embedded Systems: Suitable for embedded systems in industrial and consumer electronics that need fast and reliable memory.
  • Networking Equipment: Enhances the performance of networking equipment by providing high-speed data access and storage.
  • Automotive Electronics: The wide operating temperature range and reliability make it suitable for automotive applications where environmental conditions can vary significantly.
  • Consumer Electronics: Provides substantial storage and fast data processing for consumer electronics such as smart TVs, gaming consoles, and high-end smartphones.

Conclusion of MT29F6T08ETHBBM5-3RES:B TR

The MT29F6T08ETHBBM5-3RES:B TR from Micron Technology Inc. is a robust and high-performance memory IC designed to meet the demands of modern electronic systems. Its 6Tbit capacity, 333 MHz clock frequency, and parallel memory interface make it a superior choice for applications requiring large data storage and fast data access. The device's wide operating temperature range, flexible power supply, and compliance with environmental standards further enhance its versatility and reliability. Whether used in data storage systems, embedded systems, networking equipment, automotive electronics, or consumer electronics, the MT29F6T08ETHBBM5-3RES:B TR offers significant advantages over similar models, making it an ideal choice for engineers and designers seeking a high-performance memory solution.

FAQ

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