Micron Technology_MT29F8G08ABABAM61A3WC1
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Micron Technology
MT29F8G08ABABAM61A3WC1

774-MT29F8G08ABABAM61A3WC1
IC FLASH 8GBIT PARALLEL DIE

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Tech Specifications

Part Status Code
Obsolete
Component Density
8Gb
I/O Voltage
3.3 VOLTS
Number of Components
1
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
Die
Package / Case
Die
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MT29F8G08ABABAM61A3WC1 Description

MT29F8G08ABABAM61A3WC1 Description

The MT29F8G08ABABAM61A3WC1 is a high-performance, 8 Gbit Flash memory IC designed by Micron Technology Inc. This device is organized as 1G x 8 and is optimized for parallel memory interfaces, making it suitable for applications requiring high-speed data access storage and. The MT29F8G08ABABAM61A3WC1 is available in a die package, which is ideal for surface mount applications and offers a compact form factor for space-constrained designs.

MT29F8G08ABABAM61A3WC1 Features

  • Memory Size and Organization: The MT29F8G08ABABAM61A3WC1 features an 8 Gbit memory size, organized as 1G x 8. This configuration allows for efficient data storage and retrieval, making it suitable for applications requiring large amounts of non-volatile memory.
  • Memory Interface: The device utilizes a parallel memory interface, which enables high-speed data transfer rates and is ideal for applications requiring rapid access to stored data.
  • Operating Temperature: The MT29F8G08ABABAM61A3WC1 operates within a temperature range of 0°C to 70°C (TA), making it suitable for use in a variety of environmental conditions.
  • Voltage Supply: The device operates within a voltage range of 2.7V to 3.6V, providing flexibility in power supply requirements and ensuring compatibility with a wide range of systems.
  • Moisture Sensitivity Level (MSL): The MT29F8G08ABABAM61A3WC1 has an MSL of 3 (168 hours), indicating its resistance to moisture and suitability for use in environments with varying humidity levels.
  • RoHS Compliance: The device is ROHS3 compliant, ensuring it meets environmental and safety standards for electronic components.
  • Packaging: Available in a die package, the MT29F8G08ABABAM61A3WC1 is ideal for surface mount applications, offering a compact and reliable solution for space-constrained designs.

MT29F8G08ABABAM61A3WC1 Applications

The MT29F8G08ABABAM61A3WC1 is well-suited for a variety of applications requiring high-speed, non-volatile memory. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems where compact size and high-speed data access are critical.
  • Consumer Electronics: Suitable for consumer electronics devices that require reliable and efficient data storage.
  • Industrial Applications: The device's operating temperature range and moisture sensitivity level make it suitable for industrial applications where environmental conditions can vary.
  • Telecommunications: The MT29F8G80ABABAM61A3WC1 can be used in telecommunications equipment for storing firmware and other critical data.

Conclusion of MT29F8G08ABABAM61A3WC1

The MT29F8G08ABABAM61A3WC1 is a robust and versatile Flash memory IC designed for high-speed data storage and retrieval. Its compact die package, parallel memory interface, and wide operating temperature range make it an ideal solution for a variety of applications. While the device is now considered obsolete, its unique features and performance benefits continue to make it a valuable option for specific use cases. For those seeking a reliable and efficient memory solution, the MT29F8G08ABABAM61A3WC1 remains a viable choice.

FAQ

What voltage specification is listed for MT29F8G08ABABAM61A3WC1?
The listed voltage-related specification for MT29F8G08ABABAM61A3WC1 is 2.7V ~ 3.6V.
What package or case is MT29F8G08ABABAM61A3WC1 available in?
What operating temperature range does MT29F8G08ABABAM61A3WC1 support?
What is MT29F8G08ABABAM61A3WC1?
Is MT29F8G08ABABAM61A3WC1 currently in stock?
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