Micron Technology_MT29F8G08ADBDAH4:D TR
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Micron Technology
MT29F8G08ADBDAH4:D TR

774-MT29F8G08ADBDAH4:D TR
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IC FLASH 8GBIT PARALLEL 63VFBGA

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Tech Specifications

Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B1A
Memory Organization
1G x 8
Mounting Type
Surface Mount
Memory Type
Non-Volatile
Product Status
Obsolete
Supplier Device Package
63-VFBGA (9x11)
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MT29F8G08ADBDAH4:D TR Description

MT29F8G08ADBDAH4:D TR Description

The MT29F8G08ADBDAH4:D TR is a high-performance flash memory IC designed by Micron Technology, Inc., a leading provider of advanced semiconductor solutions. This memory IC features an 8Gbit storage capacity, organized in a 1G x 8 configuration, making it ideal for applications requiring significant data storage in a compact form factor. The device operates within a voltage range of 1.7V to 1.95V and is designed for use in environments with an operating temperature range of 0°C to 70°C (TA). It employs a parallel memory interface, ensuring fast and reliable data transfer rates.

The MT29F8G08ADBDAH4:D TR is packaged in a 63-ball fine-pitch ball grid array (FBGA) and is available in a tape and reel (TR) format, facilitating efficient surface mount assembly processes. This product is classified under the ECCN code 3A991B1A and is compliant with the Harmonized Tariff Schedule of the United States (HTSUS) code 8542.32.0071. It is also REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory adherence.

MT29F8G08ADBDAH4:D TR Features

  • High-Density Storage: The MT29F8G08ADBDAH4:D TR offers an impressive 8Gbit storage capacity, organized in a 1G x 8 configuration, providing ample space for data storage in a small footprint.
  • Parallel Interface: The parallel memory interface ensures high-speed data transfer, making it suitable for applications requiring rapid read and write operations.
  • Wide Operating Voltage Range: The device operates within a voltage range of 1.7V to 1.95V, providing flexibility and compatibility with various power supply systems.
  • Robust Temperature Range: With an operating temperature range of 0°C to 70°C (TA), the MT29F8G08ADBDAH4:D TR is designed to perform reliably in a variety of environmental conditions.
  • Surface Mount Compatibility: The 63-ball FBGA package is ideal for surface mount technology (SMT) assembly, ensuring efficient and reliable integration into modern electronic systems.
  • Moisture Sensitivity Level (MSL) 3: The device has a moisture sensitivity level of 3 (168 hours), making it suitable for use in environments with moderate humidity levels.
  • Regulatory Compliance: The MT29F8G08ADBDAH4:D TR is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental and health standards.

MT29F8G08ADBDAH4:D TR Applications

The MT29F8G08ADBDAH4:D TR is well-suited for a variety of applications where high-density storage and fast data transfer are critical. Some specific use cases include:

  • Embedded Systems: Ideal for embedded systems requiring non-volatile storage for firmware and application data.
  • Consumer Electronics: Suitable for devices such as digital cameras, media players, and smart home appliances that need reliable and high-capacity storage.
  • Industrial Control Systems: The robust temperature range and moisture sensitivity level make it suitable for industrial applications where reliability and durability are paramount.
  • Telecommunications: The high-density storage and fast data transfer capabilities are beneficial for telecom equipment requiring efficient data storage and retrieval.

Conclusion of MT29F8G08ADBDAH4:D TR

The MT29F8G08ADBDAH4:D TR is a versatile and high-performance flash memory IC that offers significant storage capacity and fast data transfer rates. Its robust design, wide operating voltage range, and compliance with environmental and health standards make it a reliable choice for a variety of applications. Despite its obsolete status, the MT29F8G08ADBDAH4:D TR remains a valuable component for systems where its unique features and advantages are required.

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