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MT40A1G8WE-075E IT:B TR

MT40A1G8WE-075E IT:B TR Description

The MT40A1G8WE-075E IT:B TR is a high-performance DRAM memory IC chip designed for demanding applications requiring significant data storage and fast access times. Manufactured by Micron Technology Inc., this 8Gbit memory device is organized as 1G x 8, offering a robust solution for systems needing substantial volatile memory. The chip operates at a clock frequency of 1.33 GHz, ensuring rapid data processing and efficient performance. It features a parallel memory interface, which is ideal for applications where high data throughput is critical.

The MT40A1G8WE-075E IT:B TR is housed in a 78FBGA package and is available in a tape & reel (TR) format, making it suitable for surface mount applications. It operates within a supply voltage range of 1.14V to 1.26V, providing flexibility in power management. This memory IC is classified under ECCN EAR99 and HTSUS 8542.32.0036, ensuring compliance with international trade regulations. Additionally, it meets REACH unaffected and ROHS3 compliance standards, making it environmentally friendly and suitable for a wide range of industries.

MT40A1G8WE-075E IT:B TR Features

• High Clock Frequency: The 1.33 GHz clock frequency enables fast data access and processing, making it suitable for high-performance computing and data-intensive applications.
• Parallel Memory Interface: This interface allows for high data throughput, which is essential for applications requiring rapid data transfer and processing.
• Volatile Memory Type: The DRAM format ensures that data is quickly accessible while the system is powered, providing efficient performance for dynamic applications.
• Surface Mount Compatibility: The surface mount mounting type and 78FBGA package make it easy to integrate into modern PCB designs, ensuring compatibility with advanced manufacturing processes.
• Wide Supply Voltage Range: The 1.14V to 1.26V supply voltage range offers flexibility in power management, making it suitable for various power supply configurations.
• Compliance and Standards: The MT40A1G8WE-075E IT:B TR meets REACH unaffected and ROHS3 compliance standards, ensuring it is environmentally friendly and suitable for a wide range of industries.
• Moisture Sensitivity Level: With an MSL of 3 (168 Hours), the chip is designed to withstand moisture exposure during manufacturing and storage, reducing the risk of damage.

MT40A1G8WE-075E IT:B TR Applications

The MT40A1G8WE-075E IT:B TR is ideal for a variety of applications where high-speed data processing and significant memory capacity are required. Some specific use cases include:

• High-Performance Computing: The high clock frequency and parallel interface make it suitable for servers and workstations that require rapid data access and processing.
• Data Centers: The large memory capacity and fast performance are ideal for data centers that need to handle large volumes of data efficiently.
• Networking Equipment: The MT40A1G8WE-075E IT:B TR can be used in routers and switches to manage data traffic and ensure smooth network operations.
• Embedded Systems: The surface mount package and compatibility with various power supply configurations make it suitable for embedded systems in industrial and automotive applications.

Conclusion of MT40A1G8WE-075E IT:B TR

The MT40A1G8WE-075E IT:B TR is a versatile and high-performance DRAM memory IC chip that offers significant advantages over similar models. Its 1.33 GHz clock frequency and parallel memory interface ensure rapid data processing and high throughput, making it ideal for high-performance computing and data-intensive applications. The surface mount compatibility and wide supply voltage range provide flexibility in design and power management. Additionally, its compliance with REACH and ROHS3 standards ensures it is environmentally friendly and suitable for a wide range of industries. While the product is now obsolete, it remains a reliable choice for applications requiring robust and efficient memory solutions.