Micron Technology_MT40A1G8WE-083E AUT:B
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Micron Technology
MT40A1G8WE-083E AUT:B

774-MT40A1G8WE-083E AUT:B
IC DRAM 8GBIT PAR 1.2GHZ 78FBGA

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Tech Specifications

Clock Frequency
1.2 GHz
Part Status Code
Obsolete
Tape & Reel Qty
2000
Component Density
8Gb
I/O Voltage
1.2 VOLTS
Number of Components
1
Memory Type
Volatile
Product Status
Obsolete
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MT40A1G8WE-083E AUT:B Description

MT40A1G8WE-083E AUT:B Description

The MT40A1G8WE-083E AUT:B is a high-performance DRAM memory IC designed by Micron Technology Inc., a leading provider of semiconductor solutions. This 8Gbit (1G x 8) memory module operates at a clock frequency of 1.2 GHz, ensuring fast data transfer rates and efficient performance. The memory is organized in a parallel format, which is ideal for applications requiring high-speed data access and processing. With a supply voltage range of 1.14V to 1.26V, the MT40A1G8WE-083E AUT:B is designed for low power consumption, making it suitable for automotive and other power-sensitive applications.

This memory IC is classified under the automotive grade, ensuring it meets the stringent reliability and performance standards required for automotive electronics. The surface mount mounting type allows for easy integration into compact and space-constrained designs. The MT40A1G8WE-083E AUT:B is packaged in a tray format, facilitating efficient handling and storage.

MT40A1G8WE-083E AUT:B Features

  • High-Speed Performance: With a clock frequency of 1.2 GHz, the MT40A1G8WE-083E AUT:B delivers high-speed data access, making it suitable for applications requiring rapid data processing.
  • Low Power Consumption: The supply voltage range of 1.14V to 1.26V ensures low power consumption, which is crucial for automotive applications where power efficiency is paramount.
  • Automotive Grade: Classified as automotive grade, this memory IC is designed to withstand the demanding conditions of automotive environments, ensuring long-term reliability and performance.
  • Parallel Memory Interface: The parallel memory interface allows for efficient data transfer and processing, making it ideal for applications requiring high-speed data access.
  • Volatile Memory: As a volatile memory type, the MT40A1G8WE-083E AUT:B retains data only while power is supplied, ensuring data integrity and security.
  • Obsolete Product Status: While the MT40A1G8WE-083E AUT:B is marked as obsolete, it remains a reliable choice for legacy systems and applications where its specific features are still required.

MT40A1G8WE-083E AUT:B Applications

The MT40A1G8WE-083E AUT:B is particularly well-suited for automotive applications due to its automotive grade classification and low power consumption. It is ideal for use in advanced driver-assistance systems (ADAS), infotainment systems, and other automotive electronics where high-speed data processing and reliability are critical. The parallel memory interface and high clock frequency make it suitable for applications requiring rapid data access, such as real-time data processing and high-definition video streaming.

Conclusion of MT40A1G8WE-083E AUT:B

The MT40A1G8WE-083E AUT:B is a robust and reliable DRAM memory IC designed for demanding automotive applications. Its high-speed performance, low power consumption, and automotive grade classification make it an ideal choice for applications requiring efficient data processing and long-term reliability. Despite its obsolete status, the MT40A1G8WE-083E AUT:B remains a valuable component for legacy systems and applications where its specific features are still in demand.

FAQ

What package or case is MT40A1G8WE-083E AUT:B available in?
MT40A1G8WE-083E AUT:B is available in the 78-TFBGA package / case.
Are there related or alternative parts for MT40A1G8WE-083E AUT:B?
Is MT40A1G8WE-083E AUT:B currently in stock?
What voltage specification is listed for MT40A1G8WE-083E AUT:B?
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