Micron Technology

MT40A1G8WE-083E IT:B TR  

Memory ICs Products

MT40A1G8WE-083E IT:B TR Description

The MT40A1G8WE-083E IT:B TR is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This 8Gbit memory device is organized as 1G x 8 and features a parallel memory interface, making it suitable for applications requiring high-speed data transfer and efficient memory management. The memory chip operates at a clock frequency of 1.2 GHz, ensuring fast data processing and reduced latency. The MT40A1G8WE-083E IT:B TR is designed for surface mount applications and is available in a 78FBGA package, which is ideal for compact and space-constrained designs.

MT40A1G8WE-083E IT:B TR Features

• High-Speed Performance: With a clock frequency of 1.2 GHz, the MT40A1G8WE-083E IT:B TR delivers rapid data processing capabilities, making it suitable for high-performance computing and data-intensive applications.
• Volatile Memory: As a DRAM device, this memory chip is volatile, meaning it retains data only while power is supplied. This characteristic is ideal for applications requiring dynamic memory allocation and frequent data updates.
• Parallel Interface: The parallel memory interface ensures efficient data transfer and synchronization, which is crucial for maintaining high throughput in multi-processing environments.
• Flexible Voltage Range: The MT40A1G8WE-083E IT:B TR operates within a voltage range of 1.14V to 1.26V, providing flexibility in power supply design and ensuring compatibility with a variety of power sources-.
  Surface Mount Technology: The surface mount mounting type allows for easy integration into modern PCB designs, reducing the overall footprint and enhancing the reliability of the memory system.
• Compliance and Safety: The MT40A1G8WE-083E IT:B TR is REACH unaffected and ROHS3 compliant, ensuring it meets the highest environmental and safety standards in the electronics industry.
• Moisture Sensitivity Level: With an MSL rating of 3 (168 hours), the memory chip is designed to withstand moderate moisture exposure, making it suitable for a range of environmental conditions.

MT40A1G8WE-083E IT:B TR Applications

The MT40A1G8WE-083E IT:B TR is well-suited for a variety of applications where high-speed, dynamic memory is required. Some specific use cases include:

• High-Performance Computing: Ideal for servers and workstations that require rapid data processing and large memory capacity to handle complex computations and data-intensive tasks.
• Networking Equipment: Suitable for routers, switches, and other networking devices that need fast memory access to manage data packets efficiently.
• Embedded Systems: Applicable in embedded systems where compact size and high performance are critical, such as automotive infotainment systems, industrial control systems, and IoT devices.
• Data Storage Systems: Can be used in RAID controllers and other storage systems that require fast and reliable memory to manage data caching and buffering.

Conclusion of MT40A1G8WE-083E IT:B TR

The MT40A1G8WE-083E IT:B TR is a robust and high-performance DRAM memory IC chip that offers significant advantages in terms of speed, flexibility, and compliance. Its 1.2 GHz clock frequency and parallel memory interface make it an excellent choice for applications requiring rapid data processing and efficient memory management. The surface mount technology and compact 78FBGA package ensure ease of integration into modern PCB designs, while its compliance with REACH and ROHS3 standards guarantees environmental and safety considerations are met. Although the product is marked as obsolete, it remains a viable option for legacy systems and specific applications where its unique features and performance benefits are still highly valued.

MT40A1G8WE-083E IT:B TR Documents

Download datasheets and manufacturer documentation for MT40A1G8WE-083E IT:B TR

Datasheets :

MT40A2G4, A1G8, A512M16      

PCN Packaging :

Standard Pkg Label Chg 20/Feb/2019       Label 12/Sep/2016