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MT40A2G4WE-083E:B

MT40A2G4WE-083E:B Description

The MT40A2G4WE-083E:B is a high-performance 8Gbit (2G x 4) DDR4 SDRAM from Micron Technology, designed for demanding computing and embedded applications. Operating at a 1.2 GHz clock frequency, this volatile memory module delivers fast data transfer rates with a parallel memory interface, ensuring efficient handling of high-bandwidth workloads. Its 1.14V–1.26V supply voltage range optimizes power efficiency, making it suitable for energy-sensitive designs. Packaged in a 78-ball FBGA (Fine-Pitch Ball Grid Array), it supports surface-mount assembly, ideal for compact and high-density PCB layouts. Although marked as obsolete, this DRAM remains relevant for legacy systems requiring reliable, high-speed memory solutions.

MT40A2G4WE-083E:B Features

• Memory Capacity: 8Gbit (2G x 4 organization) for flexible data storage.
• High-Speed Performance: 1.2 GHz clock frequency ensures rapid data access.
• Low Power Operation: 1.14V–1.26V voltage range reduces energy consumption.
• Robust Thermal Design: Operates at 0°C to 95°C (TC), suitable for industrial environments.
• Parallel Interface: Enhances data throughput for bandwidth-intensive tasks.
• Surface-Mount FBGA Package: 78-ball configuration for space-constrained applications.
• Compliance: Meets EAR99 and REACH Unaffected standards for global deployment.

MT40A2G4WE-083E:B Applications

This DRAM is ideal for:

• Enterprise Servers & Data Centers: High-speed data processing and storage.
• Networking Equipment: Routers, switches, and base stations requiring low-latency memory.
• Embedded Systems: Industrial automation, medical devices, and automotive infotainment.
• Legacy Upgrades: Replacing obsolete memory in existing hardware without redesign.
• High-Performance Computing (HPC): Accelerating workloads in scientific and financial modeling.

Conclusion of MT40A2G4WE-083E:B

The MT40A2G4WE-083E:B offers a balance of speed, power efficiency, and reliability, making it a strong choice for legacy and specialized applications. While newer alternatives may exist, its 1.2 GHz performance, low-voltage operation, and industrial-grade durability ensure continued utility in systems where compatibility and performance are critical. Engineers should evaluate its obsolescence status but can leverage its proven design for stable, high-bandwidth memory solutions.