Micron Technology_MT40A2G8NEA-062E:R TR
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Micron Technology
MT40A2G8NEA-062E:R TR

774-MT40A2G8NEA-062E:R TR
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IC DRAM 16GBIT PARALLEL 78FBGA
6 Weeks

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Tech Specifications

Clock Frequency
1.6 GHz
Operating Temperature
0°C ~ 95°C (TC)
Memory Interface
Parallel
Memory Organization
2G x 8
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Active
Supplier Device Package
78-FBGA (7.5x11)
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MT40A2G8NEA-062E:R TR Description

MT40A2G8NEA-062E:R TR Description

The MT40A2G8NEA-062E:R TR is a high-performance DRAM memory IC chip designed by Micron Technology Inc. This 16Gbit memory device is organized as 2G x 8, providing a robust solution for applications requiring significant memory capacity. The chip operates with a clock frequency of 1.6 GHz, ensuring fast data processing and efficient performance. It features a parallel memory interface, which is ideal for systems that require high-speed data transfer and low latency.

The MT40A2G8NEA-062E:R TR is housed in a 78FBGA package, making it suitable for surface-mount applications. It operates within a voltage supply range of 1.14V to 1.26V, ensuring energy efficiency and compatibility with modern power management systems. The device is designed to function within an operating temperature range of 0°C to 95°C, making it suitable for a wide range of environmental conditions.

MT40A2G8NEA-062E:R TR Features

  • High Memory Capacity: With a memory size of 16Gbit, the MT40A2G8NEA-062E:R TR provides substantial storage for data-intensive applications.
  • Fast Access Time: The access time of 13.75 ns ensures rapid data retrieval, enhancing overall system performance.
  • Low Write Cycle Time: The write cycle time of 15ns allows for efficient data writing, making it ideal for applications requiring frequent updates.
  • Volatile Memory: The DRAM format ensures that data is stored temporarily, which is beneficial for applications where data needs to be frequently refreshed.
  • Moisture Sensitivity Level (MSL) 3: This indicates that the device can withstand up to 168 hours of exposure to moisture, making it suitable for various manufacturing and operational environments.
  • Compliance: The MT40A2G8NEA-062E:R TR is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards.
  • Active Product Status: This indicates that the device is currently in production and readily available for integration into new designs.

MT40A2G8NEA-062E:R TR Applications

The MT40A2G8NEA-062E:R TR is well-suited for a variety of applications that demand high-speed, high-capacity memory solutions. Some specific use cases include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data processing and storage.
  • Telecommunications: Suitable for base stations and other telecommunication infrastructure that need efficient memory management.
  • Industrial Control Systems: Applicable in industrial automation and control systems where reliability and performance are critical.
  • High-Performance Computing: Beneficial in servers and high-performance computing systems that require large amounts of memory to handle complex computations.
  • Consumer Electronics: Suitable for advanced consumer electronics such as gaming consoles and smart TVs that require high-speed memory for optimal performance.

Conclusion of MT40A2G8NEA-062E:R TR

The MT40A2G8NEA-062E:R TR from Micron Technology Inc. is a versatile and high-performance DRAM memory IC chip. With its 16Gbit capacity, fast access time, and low write cycle time, it offers significant advantages over similar models. Its compliance with environmental and safety standards, along with its active product status, ensures that it is a reliable choice for various applications. Whether used in networking equipment, telecommunications, industrial control systems, high-performance computing, or consumer electronics, the MT40A2G8NEA-062E:R TR provides the necessary memory capacity and performance to meet the demands of modern electronic systems.

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