Micron Technology_MT40A2G8NRE-083E:B
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Micron Technology
MT40A2G8NRE-083E:B

774-MT40A2G8NRE-083E:B
IC DRAM 16GBIT PAR 1.2GHZ 78FBGA

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Tech Specifications

Clock Frequency
1.2 GHz
Part Status Code
Obsolete
Tape & Reel Qty
2000
Component Density
16Gb
I/O Voltage
1.2 VOLTS
Number of Components
2
Memory Type
Volatile
Product Status
Obsolete
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MT40A2G8NRE-083E:B Description

MT40A2G8NRE-083E:B Description

The MT40A2G8NRE-083E:B is a high-performance, volatile DRAM memory IC manufactured by Micron Technology Inc., designed for use in various electronic systems requiring high-speed data processing and storage. This 16Gbit DRAM IC operates at a clock frequency of 1.2 GHz, providing rapid access to stored data. With a memory organization of 2G x 8, it offers a substantial amount of memory for applications that demand high-density storage. The memory interface is parallel, facilitating seamless integration with existing systems. The MT40A2G8NRE-083E:B is surface mount, making it suitable for compact and space-constrained designs.

MT40A2G8NRE-083E:B Features

  • Clock Frequency: 1.2 GHz, ensuring fast data transfer rates.
  • Memory Interface: Parallel, for compatibility with a wide range of systems.
  • Memory Organization: 2G x 8, providing 16Gbit of memory capacity.
  • Memory Type: Volatile DRAM, suitable for applications requiring rapid access to data.
  • Voltage - Supply: 1.14V ~ 1.26V, allowing for flexible power supply options.
  • Operating Temperature: 0°C ~ 95°C (TC), making it suitable for a variety of environments.
  • Moisture Sensitivity Level (MSL): 3 (168 Hours), indicating a moderate level of moisture resistance.
  • REACH Status: REACH Unaffected, compliant with European chemical regulations.
  • ECCN: EAR99, indicating export control classification.
  • Package: Tray

MT40A2G8NRE-083E:B Applications

The MT40A2G8NRE-083E:B is ideal for applications that require high-speed data processing and large memory capacity. Some specific use cases include:

  • High-Performance Computing: For servers and workstations that demand rapid access to large datasets.
  • Networking Equipment: In routers and switches where high-speed data transfer is critical.
  • Embedded Systems: For systems that require fast processing of large amounts of data, such as in industrial automation or medical devices.
  • Consumer Electronics: In high-end gaming consoles and multimedia devices that require quick access to large data sets.

Conclusion of MT40A2G8NRE-083E:B

The MT40A2G8NRE-083E:B is a robust and high-capacity DRAM memory IC that offers significant advantages in terms of speed and storage for demanding applications. Its 1.2 GHz clock frequency and 16Gbit memory capacity make it a powerful choice for systems that require rapid data access and high-density storage. While it is now considered obsolete, it remains a viable option for legacy systems or applications where this specific memory configuration is required. Its unique features, such as the parallel memory interface and surface mount design, make it suitable for a wide range of electronic devices.

FAQ

What voltage specification is listed for MT40A2G8NRE-083E:B?
The listed voltage-related specification for MT40A2G8NRE-083E:B is 1.14V ~ 1.26V.
Is MT40A2G8NRE-083E:B currently in stock?
What package or case is MT40A2G8NRE-083E:B available in?
What operating temperature range does MT40A2G8NRE-083E:B support?
What is MT40A2G8NRE-083E:B?
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