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Micron Technology
MT40A512M16TB-062E:R
774-MT40A512M16TB-062E:R
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IC DRAM 8GBIT PARALLEL 96FBGA
2 Weeks
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Tech Specifications
Clock Frequency
1.6 GHz
Part Status Code
Production
Component Density
8Gb
Number of Components
1
PPAP
No
Data Bus Width (bit)
16
Number of Internal Banks
8
Memory Type
Volatile
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MT40A512M16TB-062E:R Description
Micron Technology, Inc.
MT40A512M16TB-062E:R
8Gb (512M x 16) DDR4 SDRAM · 1.2V · 3200 Mbps (DDR4-3200) · 96-ball FBGA · Commercial Temperature
🧠 8Gb Density (1GB) ⚡ 1.2V (VDD/VDDQ) 🚀 DDR4-3200 (PC4-25600) 📦 96-ball FBGA (7.5×13mm) 🌡️ 0°C to +95°C
📖 Product Overview
The MT40A512M16TB-062E:R is an 8,589,934,592‑bit (8Gb) Double Data Rate 4 (DDR4) SDRAM from Micron Technology, organized as 536,870,912 words × 16 bits (512M x 16)[reference:0]. It is designed for high‑performance server, networking, and embedded computing applications that demand high bandwidth, low power consumption, and JEDEC‑compliant operation.
This device operates at 1.2V (VDD and VDDQ) and achieves a maximum data rate of 3200 Mbps per pin (DDR4-3200), providing a peak bandwidth of 6.4 GB/s (with 16‑bit I/O)[reference:1]. The memory array is organized as 8 internal banks for the x16 configuration, supporting programmable CAS latency (CL=22 at 3200Mbps for the -062E speed grade), on‑die termination (ODT), and low‑power auto‑refresh modes[reference:2]. Advanced DDR4 features include data bus inversion (DBI), CRC error detection, command/address parity, and temperature‑compensated refresh (TCR)[reference:3].
The MT40A512M16TB-062E:R is housed in a standard 96‑ball FBGA package (7.5mm × 13mm, 0.8mm ball pitch), making it suitable for high‑density DIMM modules, industrial mainboards, and embedded systems[reference:4]. The colon‑"R" suffix denotes tape‑and‑reel packaging (as opposed to tray), while the ":R" indicates Revision R silicon (1z nm process node)[reference:5]. The commercial temperature range of 0°C to +95°C (TC) ensures reliable operation in standard computing environments[reference:6]. The "-062E" speed bin specifies DDR4-3200 operation with CL=22, tRCD=22, tRP=22 timing (nominal at 85°C)[reference:7].
📋 Technical Specifications
Density
8 Gb (8,589,934,592 bits) / 1 GB
Organization
512M x 16 (536,870,912 words × 16 bits)
Bank Architecture
8 banks (for x16 configuration); 16 banks for x4/x8
Data Rate (Max)
3200 Mbps (DDR4-3200, PC4-25600)
Clock Frequency (tCK)
1600 MHz (0.625 ns cycle time)
CAS Latency (CL)
22 cycles @ 3200 Mbps (for -062E speed grade)
Access Time (tAA)
13.75 ns (max)
Supply Voltage (VDD / VDDQ)
1.20V ±60mV (1.14V – 1.26V)
VPP (DRAM Activation Voltage)
2.5V −125mV / +250mV
Activation Current (IDD0)
75 mA (typical)
Standby Current (IDD2N)
45 mA (typical)
Operating Temperature (Case)
0°C to +95°C (Commercial)
Package
96-ball FBGA (7.5mm × 13mm × 1.2mm)
✨ Key Features
DDR4 Architecture – 1.2V low‑power operation, up to 3200 Mbps
High Bandwidth – 6.4 GB/s peak bandwidth (16‑bit data path)
8 Banks / 16 Banks – Improves concurrency and efficiency
On‑Die Termination (ODT) – Configurable for signal integrity
Programmable CAS Latency & Additive Latency
Data Bus Inversion (DBI) – Reduces power and EMI
Cyclic Redundancy Check (CRC) – Write data integrity checking
Command/Address Parity – Error detection on command/address bus
Auto Refresh & Self Refresh – Low‑power modes, temperature‑compensated refresh (TCR)
Fine Granularity Refresh (FGR) – Optional
JEDEC Standard Compliant – DDR4 (JESD79-4) and DDR4‑3200
🎯 Typical Applications
Servers & Data Centers (DIMM modules) Industrial & Embedded Computing Systems Networking (High‑end routers, switches, NPUs) Automotive Infotainment & ADAS (commercial temp grade) Telecom Baseband & Line Cards Medical Imaging & Diagnostic Equipment Gaming Consoles & High‑End Workstations Aerospace & Defense (commercial temp)
Bandwidth (x16)
6.4 GB/s
Peak bandwidth @ 3200 Mbps
Refresh
64ms / 8K cycles
Auto refresh interval (Tcase ≤ 85°C), extended at higher temp
Package Dimensions
7.5×13 mm
96‑ball FBGA, 0.8mm ball pitch, 1.2mm height
🔍 Part Number Decoding (MT40A512M16TB-062E:R)
MT – Micron Technology product prefix.
40A – DDR4 SDRAM component (4 = DDR4 generation, 0A = component type).
512M – Row address space (512 Meg locations, NOT 512 megabytes).
16 – Data bus width: x16 (16 data lines: DQ0–DQ15).
T – Die technology generation code.
B – Die version (second silicon generation).
-062E – Speed grade: tCK(min) = 0.625 ns → clock frequency = 1600 MHz → DDR4-3200.
:R – Revision R silicon (1z nm process node) and colon indicates Tape & Reel packaging.
Compatible variations – MT40A512M16TB-062E (tray) and MT40A512M16TB-062E‑IT:R (industrial temperature).
40A – DDR4 SDRAM component (4 = DDR4 generation, 0A = component type).
512M – Row address space (512 Meg locations, NOT 512 megabytes).
16 – Data bus width: x16 (16 data lines: DQ0–DQ15).
T – Die technology generation code.
B – Die version (second silicon generation).
-062E – Speed grade: tCK(min) = 0.625 ns → clock frequency = 1600 MHz → DDR4-3200.
:R – Revision R silicon (1z nm process node) and colon indicates Tape & Reel packaging.
Compatible variations – MT40A512M16TB-062E (tray) and MT40A512M16TB-062E‑IT:R (industrial temperature).
📌 Environmental & Regulatory Information
✅ RoHS Compliant: Yes (ROHS3 Compliant) ✅ Lead‑Free: Yes 🌍 MSL: Level 3 – 168 hours 🔌 ECCN: EAR99 🇺🇸 HTSUS: 8542.32.0036 🏭 Country of Origin: Taiwan / USA 📦 Packaging: Tape & Reel (TR), Cut Tape (CT), Tray ⚠️ Product Status: Obsolete (discontinued) – not recommended for new designs
⚠️ The MT40A512M16TB-062E:R is an obsolete product – not recommended for new designs. For legacy system maintenance and industrial/commercial replacement applications only. Consult Micron for replacement or upgrade options.
Information based on Micron DDR4 product family documentation and JEDEC JESD79‑4 standards.
Information based on Micron DDR4 product family documentation and JEDEC JESD79‑4 standards.
FAQ
What is the MT40A512M16TB-062E:R?
A: The MT40A512M16TB-062E:R is an 8‑gigabit (8Gb) Double Data Rate 4 (DDR4) Synchronous DRAM manufactured by Micron Technology. It is internally organized as 512M words × 16 bits (512M × 16) and is housed in a 96‑ball FBGA (Fine‑Pitch Ball Grid Array) package measuring 7.5 × 13 mm. The device is designed for high‑performance computing, server, and networking applications requiring high density and bandwidth.
What are the key technical features and specifications?
A: The MT40A512M16TB-062E:R offers high speed and low power consumption. The table below summarizes its core specifications, drawn directly from manufacturer data and multiple distributor sources:
Specification Value
Memory Density 8 Gbit (1 GByte)
Memory Organization 512M × 16 bits
Memory Interface Parallel
Clock Frequency (fCK) 1.6 GHz
Access Time (tAC) 19 ns
Write Cycle Time 15 ns
Supply Voltage (VDD/VDDQ) 1.14V to 1.26V (1.2V nominal)
Operating Temperature (TC) 0°C to 95°C (commercial grade)
Package Type 96-ball FBGA (7.5 × 13 mm)
RoHS Status ROHS3 Compliant
The device features an 8n‑prefetch architecture combined with an interface designed to transfer two data words per clock cycle at the I/O pins. For the x16 configuration, the DRAM is internally configured as an eight‑bank DRAM. Additional features include: programmable data strobe preambles, data strobe preamble training, command/address latency, a multipurpose register for READ and WRITE capability, write leveling, self refresh mode, low‑power auto self refresh, temperature controlled refresh, fine granularity refresh, self refresh abort, output driver calibration, data bus inversion (DBI), command/address (CA) parity, data bus write cyclic redundancy check, per‑DRAM addressability, connectivity test, and JEDEC JESD‑79‑4 compliance.
What is the lifecycle status of this device?
A: The lifecycle status for the MT40A512M16TB-062E:R is contradictory across authoritative sources:
DigiKey lists the Part Status as Obsolete and no longer manufactured.
Farnell (Newark) lists the part as Active, currently in stock and available for purchase.
Other distributor databases list the Product Status as Active.
Given the conflicting lifecycle reports across distributors, engineers are strongly advised to verify current lifecycle status, availability, and lead times directly with an authorised Micron distributor (such as Mouser, Digi‑Key, Future Electronics, or Arrow) before committing this part to a new high‑volume design. For projects requiring long‑term supply assurance, the recommended substitute from DigiKey is the AS4C512M16D4B‑62BCN from Alliance Memory, Inc.
What interface does the MT40A512M16TB-062E:R use and how does it communicate?
A: The device uses a standard DDR4 parallel interface, connecting to a memory controller via a 96‑ball FBGA package. The device supports 1.6 GHz operation with an access time of 19 ns and a write cycle time of 15 ns. Key interface signals include CK_t/CK_c differential clock inputs, CKE clock enable, CS_n chip select, command inputs (RAS_n, CAS_n, WE_n, ACT_n), bank address inputs (BA0‑BA1), bank group address inputs (BG0‑BG1), address inputs (A0‑A17), a 16‑bit bidirectional data bus (DQ[15:0]), differential data strobe signals (DQS_t/DQS_c) for two byte lanes, data mask/data bus inversion (DM_n/DBI_n), ODT on‑die termination control, ZQ calibration reference, asynchronous RESET_n, and optional command/address parity (PAR). All signals are referenced to the rising edge of CK_t/CK_c, with data transferred on both edges of the clock (Double Data Rate). The 8n‑prefetch architecture allows a single READ or WRITE operation to transfer an 8n‑bit wide data block at the internal core while the I/O pins perform two corresponding n‑bit wide, half‑clock‑cycle data transfers.
What are the temperature range and environmental compliance specifications?
A: The MT40A512M16TB-062E:R is specified for commercial temperature operation. Key environmental and compliance specifications include:
Specification Value
Operating Temperature (TC) 0°C to 95°C
Storage Temperature Not publicly specified, typical for DDR4 devices
Moisture Sensitivity Level (MSL) 3 (168 hours)
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99
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