Micron Technology_MT41K128M16V89C3WC1
Micron Technology_MT41K128M16V89C3WC1
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Micron Technology
MT41K128M16V89C3WC1

774-MT41K128M16V89C3WC1
IC DRAM 2GBIT PARALLEL DIE
2 Weeks

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Tech Specifications

Operating Temperature
0°C ~ 95°C (TC)
Memory Interface
Parallel
Memory Organization
128M x 16
Memory Type
Volatile
Product Status
Active
Series
-
Write Cycle Time - Word, Page
-
Memory Size
2Gbit
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MT41K128M16V89C3WC1 Description

MT41K128M16V89C3WC1 Description

The MT41K128M16V89C3WC1 is a high-performance DRAM memory IC designed by Micron Technology Inc., a leading provider of advanced semiconductor solutions. This 2Gbit DRAM device features a parallel memory interface, offering robust performance and reliability for various applications. The memory is organized as 128M x 16, providing a large storage capacity in a compact form factor. It operates within a voltage range of 1.283V to 1.45V, ensuring efficient power consumption and compatibility with modern systems.

With an operating temperature range of 0°C to 95°C, the MT41K128M16V89C3WC1 is suitable for a wide range of industrial and consumer applications. The device is packaged in bulk and is REACH unaffected, ensuring compliance with environmental regulations. It also meets the RoHS3 compliance standard, making it suitable for environmentally conscious designs.

MT41K128M16V89C3WC1 Features

  • High Capacity and Organization: The 128M x 16 memory organization provides a substantial storage capacity of 2Gbit, ideal for applications requiring large data sets.
  • Parallel Memory Interface: The parallel interface ensures high-speed data transfer and compatibility with various systems.
  • Efficient Power Consumption: Operating within a voltage range of 1.283V to 1.45V, the device offers efficient power usage, making it suitable for energy-sensitive applications.
  • Wide Operating Temperature Range: With a temperature range of 0°C to 95°C, the MT41K128M16V89C3WC1 can operate reliably in diverse environments.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring it meets stringent environmental standards.
  • Bulk Packaging: The bulk packaging option simplifies inventory management and reduces costs for large-scale production.
  • Moisture Sensitivity Level (MSL): Rated at MSL 3 (168 Hours), the device is protected against moisture, ensuring long-term reliability.

MT41K128M16V89C3WC1 Applications

The MT41K128M16V89C3WC1 is well-suited for a variety of applications where high-speed data processing and large memory capacity are essential. Key applications include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require high-speed data transfer and large memory capacity.
  • Industrial Control Systems: Suitable for programmable logic controllers (PLCs) and industrial automation systems that demand reliable and efficient memory solutions.
  • Consumer Electronics: Applicable in high-performance gaming consoles, multimedia devices, and smart TVs where large data sets and fast processing are critical.
  • Telecommunications: Used in base stations and communication infrastructure that require robust memory performance and reliability.
  • Embedded Systems: Appropriate for embedded systems in automotive, aerospace, and medical devices where compact size and high performance are necessary.

Conclusion of MT41K128M16V89C3WC1

The MT41K128M16V89C3WC1 from Micron Technology Inc. is a versatile and high-performance DRAM memory IC that offers significant advantages over similar models. Its large memory capacity, efficient power consumption, and wide operating temperature range make it an ideal choice for a variety of applications. The device's compliance with environmental standards and robust packaging further enhance its appeal for modern electronics designs. Whether used in networking equipment, industrial control systems, or consumer electronics, the MT41K128M16V89C3WC1 provides reliable and efficient memory solutions, ensuring optimal performance and reliability in diverse environments.

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