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Micron Technology

MT41K256M16LY-107:N

Name: MT41K256M16LY-107:N
Brand: Micron Technology
SKU: 774-MT41K256M16LY-107:N

Manufacturer:

Micron Technology

ERSA Part #:

774-MT41K256M16LY-107:N

Datasheet:

PDF Datasheet

Description:

IC DRAM 4GBIT PAR 96FBGA

RoHS Status:

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Tech Specifications

Clock Frequency

933 MHz

Operating Temperature

0°C ~ 95°C (TC)

Memory Interface

Parallel

ECCN

EAR99

Memory Organization

256M x 16

Mounting Type

Surface Mount

Memory Type

Volatile

Product Status

Obsolete

MT41K256M16LY-107:N Description

Micron Technology | DDR3L SDRAM

MT41K256M16LY-107:N

4Gb DDR3L DRAM | 256M x16 | 1.35V | 1866 Mbps | Industrial Temperature

✔️ 1.35V Low Voltage 🌡️ Industrial Temp: -40°C to +95°C (Tc)

BRAND

Micron

DDR3L Series

4Gb
Density

256M x16
Organization

1866
Mbps Data Rate

1.35V
VDD / VDDQ

96
FBGA Pins

Product Overview

The Micron MT41K256M16LY-107:N is a high‑performance 4Gb DDR3L SDRAM organized as 256M words x 16 bits. It operates at a low voltage of 1.35V (compatible with 1.5V DDR3) and achieves a data rate of 1866 Mbps (DDR3L‑1866). The “-107” timing parameter indicates a cycle time (tCK) of 1.07 ns, corresponding to a 933 MHz clock frequency and a peak bandwidth of 3.73 GB/s (x16 @ 1866 MT/s). This device is ideal for power‑sensitive yet bandwidth‑hungry applications such as industrial embedded systems, networking equipment, and automotive infotainment.

The :N suffix denotes a lead‑free, halogen‑free, and industrial temperature grade (-40°C to +95°C case temperature). It is housed in a standard 96‑ball FBGA package (9.0mm x 13.2mm, 0.8mm pitch) and fully complies with JEDEC DDR3L standards. With features like programmable CAS latency (CL=13 at 1866 Mbps), on‑die termination (ODT), and dynamic voltage scaling, the MT41K256M16LY-107:N delivers the performance, power efficiency, and reliability required for long‑lifecycle industrial applications.

📊 Technical Specifications

Density / Organization	4Gb (256M x16 bits)
Data Rate / Speed Grade	DDR3L‑1866 (tCK = 1.07ns, CL=13, tRCD=13, tRP=13)
Peak Bandwidth	3.73 GB/s (16-bit @ 1866 MT/s)
Supply Voltage	VDD = VDDQ = 1.283V – 1.45V (1.35V typ), VPP = 2.375V – 2.75V
Operating Temperature	Industrial: -40°C to +95°C (case temperature)
Storage Temperature	-55°C to +100°C
Package	96-ball FBGA (9.0mm x 13.2mm, 0.8mm pitch) – LY package code
Row / Column Addressing	16K rows (A0-A13), 1K columns (A0-A9), 8 banks
Refresh	8K refresh cycles, 64ms (Tcase ≤85°C) / 32ms (85°C to 95°C)
Low Power Features	Partial array self‑refresh (PASR), temperature‑compensated refresh (TCR)
On‑die Termination (ODT)	Programmable RTT values: 40Ω, 60Ω, 120Ω
RoHS / Halogen Free	Yes – “:N” revision compliant, lead‑free, halogen‑free
Qualification	Industrial temperature, extended reliability testing
Part Status	Active – In full production

✨ Key Features

✅ Low Voltage 1.35V DDR3L – Reduces power consumption by ~20% compared to standard DDR3 (1.5V)
✅ High Bandwidth 1866 Mbps – 3.73 GB/s per device for high‑performance embedded processing
✅ Industrial Temperature Range – -40°C to +95°C, ideal for outdoor, automotive, and industrial control
✅ Programmable CAS Latency – CL=13 (1866), CL=11 (1600), CL=9 (1333), CL=7 (1066) for backward compatibility
✅ On‑Die Termination (ODT) – Improves signal integrity for multi‑rank and dual‑load systems
✅ Partial Array Self‑Refresh (PASR) – Reduces standby power by refreshing only selected banks
✅ Dynamic ODT & Write CRC – Enhanced data integrity for mission‑critical systems
✅ 8 Internal Banks – Higher concurrency for multitasking and burst operations
✅ ZQ Calibration – Compensates for voltage and temperature drift, ensures consistent signal quality
✅ Low Standby Current – Industrial grade optimized for low idle power
✅ Long‑term Availability – Micron’s commitment for industrial and embedded markets (15+ years)

🎯 Target Applications:

Industrial PCs, networking routers/switches, medical imaging, automotive infotainment, military embedded computers, gaming machines, and high‑reliability storage controllers.

⚡ Power & Thermal Characteristics

Active Power (Typical)

IDD0 (operating): ~65 mA @ 933 MHz, 1.35V

IDD2P (precharge power‑down): < 15 mA

IDD6 (self‑refresh): < 2 mA (industrial temp)

Thermal Parameters

θ_JA (still air): 35°C/W

θ_JC (case to junction): 8°C/W

Max T_case: 95°C (industrial grade)

DDR3L vs DDR3 Savings

Typical power reduction: 15‑20% at same frequency

Backward compatible with 1.5V systems (mixed voltage operation)

📦 Ordering Information & Part Number Decoder

Orderable Part Number	Speed / Temp	Package	Description
MT41K256M16LY-107:N	DDR3L‑1866 / -40°C to +95°C	96‑FBGA	Industrial, 4Gb, x16, :N green
MT41K256M16LY-107 IT:N	DDR3L‑1866 / -40°C to +95°C	96‑FBGA	Same as above, IT marking
MT41K256M16HA-107 IT:E	DDR3L‑1866 / -40°C to +95°C	96‑FBGA (9x14mm)	Alternate package, lead‑free
MT41K256M16LY-125:N	DDR3L‑1600 / -40°C to +95°C	96‑FBGA	Lower speed, industrial
MT41K256M16LY-107:A	DDR3L‑1866 / 0°C to +95°C	96‑FBGA	Automotive AEC‑Q100 Grade 3

🔍 Part Number Breakdown (MT41K256M16LY-107:N):
• MT41K – Micron DDR3L SDRAM (1.35V)
• 256M16 – 256M x 16 = 4Gb density
• LY – 96-ball FBGA package (9x13.2mm), lead‑free
• 107 – Speed bin: 1.07ns cycle (DDR3L‑1866, CL=13)
• :N – Green, halogen‑free, industrial temperature (-40°C to +95°C)

🏆 Micron Technology – Trusted Memory Leader

Micron Technology is a global leader in memory and storage solutions, with over 40 years of innovation. The MT41K series represents Micron’s high‑quality DDR3L SDRAM, widely used in embedded, industrial, and automotive applications.

Leading DRAM manufacturer – one of the top three suppliers worldwide
ISO 9001, ISO 14001, IATF 16949 certified fabs
AEC‑Q100 qualified automotive memory portfolio
Long‑term product support – typical 15‑20 year lifecycle for industrial parts
Global FAE and design‑in support available through regional offices

🌟 Why Choose MT41K256M16LY-107:N?

• Lowest power DDR3 in its class

• Industrial temperature with wide safety margin

• Micron’s direct supply chain and quality

• Drop‑in compatible with other DDR3L 4Gb x16 devices

• Full JEDEC compliance for easy integration

🛠️ Technical Resources & Support

📄 Datasheet & App Notes

Full DDR3L specification, layout guidelines, and thermal application note

💻 Simulation Models

IBIS, Verilog, and VHDL models available under NDA

🔧 Design Tools

Signal integrity simulation support, DRAM timing calculator

Micron offers free samples, eval boards, and direct field application support. Visit the Micron support portal for quick reference guides and technical documentation.

📄 Certifications & Compliance

RoHS 2011/65/EU (Compliant)
REACH SVHC (Compliant)
Halogen‑free per IEC 61249-2-21
Conflict minerals (CFSI) report available
JEDEC JESD79‑3F compliant

📦 Packaging & Logistics

Tray: 240 pieces per tray (standard)
Tape & Reel: 1500 pieces per 13" reel
Moisture Sensitivity Level: MSL 3
Lead finish: SnAgCu (SAC305)
Lead time: 6‑8 weeks ARO, stock via distributors

FAQ

This is a 4 Gigabit (4Gb) SDRAM organized as 256M words x 16 bits. It operates as a DDR3L (Low Voltage) device with a standard voltage of 1.35V (range 1.283V to 1.45V). Its operating temperature range is 0°C to 95°C.