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MT41K256M16TW-107 V:P

MT41K256M16TW-107 V:P Description

The MT41K256M16TW-107 V:P is a high-performance, 4Gbit DRAM memory IC designed by Micron Technology Inc. This device is characterized by its volatile memory format, which ensures data is retained only while power is supplied, making it ideal for applications requiring frequent data updates. The memory is organized in a 256M x 16 configuration, offering efficient data storage and retrieval capabilities. The MT41K256M16TW-107 V:P operates with a clock frequency of 933 MHz, providing fast data access times of 20 ns. It supports a supply voltage range of 1.283V to 1.45V, ensuring compatibility with a variety of power supply systems.

This memory IC features a parallel memory interface, which allows for high-speed data transfer and is suitable for applications requiring rapid data processing. The MT41K256M16TW-107 V:P is housed in a 96FBGA package, making it suitable for surface mount applications. It is designed to operate within a temperature range of 0°C to 95°C (TC), ensuring reliability in various environmental conditions. The device is REACH unaffected and RoHS3 compliant, adhering to stringent environmental and safety standards. The moisture sensitivity level (MSL) is rated at 3 (168 hours), indicating its robustness against moisture exposure.

MT41K256M16TW-107 V:P Features

• High-Speed Performance: With a clock frequency of 933 MHz and an access time of 20 ns, the MT41K256M16TW-107 V:P ensures rapid data processing, making it suitable for high-performance computing applications.
• Volatile Memory: The volatile nature of the DRAM ensures that data is only retained while power is supplied, which is ideal for applications requiring frequent data updates and dynamic memory management.
• Flexible Voltage Range: The supply voltage range of 1.283V to 1.45V provides compatibility with various power supply systems, enhancing its versatility in different electronic designs.
• Robust Packaging: The 96FBGA package and surface mount mounting type make the MT41K256M16TW-107 V:P suitable for compact and high-density PCB designs.
• Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring it meets environmental and safety standards, making it suitable for global markets.
• Moisture Resistance: With an MSL rating of 3 (168 hours), the MT41K256M16TW-107 V:P is designed to withstand moisture exposure, enhancing its reliability in various environmental conditions.

MT41K256M16TW-107 V:P Applications

The MT41K256M16TW-107 V:P is ideal for a range of applications requiring high-speed data processing and dynamic memory management. Some specific use cases include:

• High-Performance Computing: The fast access times and high clock frequency make it suitable for applications such as servers, workstations, and other high-performance computing systems.
• Networking Equipment: The device's robustness and high-speed performance make it ideal for networking equipment, such as routers and switches, where rapid data processing is crucial.
• Industrial Control Systems: The wide operating temperature range and moisture resistance make the MT41K256M16TW-107 V:P suitable for industrial control systems that operate in harsh environments.
• Consumer Electronics: The compact packaging and flexible voltage range make it suitable for consumer electronics, such as gaming consoles and high-end multimedia devices, where space and power efficiency are critical.

Conclusion of MT41K256M16TW-107 V:P

The MT41K256M16TW-107 V:P is a versatile and high-performance DRAM memory IC designed to meet the demands of modern electronic systems. Its fast access times, high clock frequency, and robust packaging make it suitable for a wide range of applications, from high-performance computing to industrial control systems. The device's environmental compliance and moisture resistance further enhance its reliability and suitability for global markets. Despite being marked as obsolete, the MT41K256M16TW-107 V:P remains a reliable choice for applications requiring dynamic memory management and high-speed data processing.