Micron Technology_MT41K2G4TRF-107:E
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Micron Technology
MT41K2G4TRF-107:E

774-MT41K2G4TRF-107:E
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IC DRAM 8GBIT PAR 78FBGA

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Tech Specifications

Clock Frequency
933 MHz
Part Status Code
Obsolete
Tape & Reel Qty
2000
Component Density
8Gb
I/O Voltage
1.35 VOLTS
Number of Components
2
Memory Type
Volatile
Product Status
Obsolete
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MT41K2G4TRF-107:E Description

MT41K2G4TRF-107:E Description

The MT41K2G4TRF-107:E is a high-performance, 8Gbit DRAM memory IC chip designed for demanding applications requiring large memory capacities and fast data access. Manufactured by Micron Technology Inc., this IC features a parallel memory interface, providing efficient data transfer capabilities. The memory is organized in a 2G x 4 configuration, ensuring robust performance in various computing environments.

This DRAM IC operates within a voltage range of 1.283V to 1.45V, making it suitable for low-power consumption systems. The clock frequency of 933 MHz ensures rapid data processing, while the 20 ns access time guarantees quick retrieval of stored information. The operating temperature range of 0°C to 95°C (TC) makes it ideal for use in a variety of environmental conditions.

MT41K2G4TRF-107:E Features

  • Memory Size and Organization: The MT41K2G4TRF-107:E offers a substantial 8Gbit memory size, organized as 2G x 4, providing ample storage capacity for complex applications.
  • High-Speed Performance: With a clock frequency of 933 MHz and an access time of 20 ns, this IC ensures high-speed data processing and retrieval.
  • Low-Power Operation: The voltage supply range of 1.283V to 1.45V supports low-power consumption, making it suitable for energy-efficient systems.
  • Wide Operating Temperature Range: The operating temperature range of 0°C to 95°C (TC) ensures reliability in diverse environmental conditions.
  • Surface Mount Technology: The surface mount mounting type facilitates easy integration into compact and high-density designs.
  • Moisture Sensitivity Level: MSL 3 (168 Hours) ensures the IC's durability and reliability in moisture-sensitive environments.
  • RoHS Compliance: The MT41K2G4TRF-107:E is ROHS3 compliant, adhering to environmental standards and ensuring safe usage in various applications.

MT41K2G4TRF-107:E Applications

The MT41K2G4TRF-107:E is ideal for applications requiring high-speed, high-capacity memory solutions. Its features make it suitable for:

  • Networking Equipment: High-speed routers and switches benefit from the rapid data access and large memory capacity.
  • Telecommunications: Base stations and communication systems can leverage the IC's performance for efficient data handling.
  • Embedded Systems: Industrial control systems and IoT devices can utilize the low-power, high-performance capabilities.
  • Consumer Electronics: High-definition televisions and gaming consoles can benefit from the fast and reliable memory access.

Conclusion of MT41K2G4TRF-107:E

The MT41K2G4TRF-107:E is a versatile and high-performance DRAM IC chip that offers significant advantages over similar models. Its large memory size, fast access times, and low-power operation make it an ideal choice for a wide range of applications. While the product is now obsolete, its legacy continues to influence the design and development of modern memory solutions. For applications requiring robust, high-speed memory, the MT41K2G4TRF-107:E remains a reliable and efficient choice.

FAQ

What voltage specification is listed for MT41K2G4TRF-107:E?
The listed voltage-related specification for MT41K2G4TRF-107:E is 1.283V ~ 1.45V.
What is MT41K2G4TRF-107:E?
What operating temperature range does MT41K2G4TRF-107:E support?
What is the mounting type of MT41K2G4TRF-107:E?
What package or case is MT41K2G4TRF-107:E available in?
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