Micron Technology

MT41K512M16TNA-107:E  

Memory ICs Products

MT41K512M16TNA-107:E Description

The MT41K512M16TNA-107:E is a high-performance 8Gbit (512M x 16) DDR3L SDRAM from Micron Technology, designed for demanding applications requiring high-speed, low-power volatile memory. Operating at a 933 MHz clock frequency with a 20 ns access time, this parallel-interface DRAM delivers efficient data throughput for compute-intensive systems. It features a 1.283V–1.45V supply voltage, making it suitable for power-sensitive designs. The device is housed in a 96FBGA package and is RoHS3 compliant, adhering to environmental standards. Though now obsolete, it remains a reliable choice for legacy or long-lifecycle embedded systems.

MT41K512M16TNA-107:E Features

• High Density: 8Gbit (512M x 16) organization for large memory requirements.
• Speed: 933 MHz clock frequency with 20 ns access time for rapid data processing.
• Low Power: DDR3L (1.283V–1.45V) operation reduces energy consumption.
• Parallel Interface: Optimized for high-bandwidth applications.
• Robust Packaging: 96FBGA surface-mount package ensures mechanical stability.
• Industrial Compliance: RoHS3 compliant and rated for 0°C to 95°C (TC) operation.
• Legacy Support: Ideal for systems requiring long-term component availability.

MT41K512M16TNA-107:E Applications

• Embedded Systems: Ideal for industrial automation, medical devices, and aerospace applications requiring reliable, high-speed memory.
• Networking Equipment: Routers, switches, and base stations benefit from its parallel interface and low latency.
• Legacy Upgrades: Suitable for retrofitting older systems where newer memory technologies are incompatible.
• High-Performance Computing: Supports data-intensive tasks in servers and storage systems.

Conclusion of MT41K512M16TNA-107:E

The MT41K512M16TNA-107:E offers a balance of speed, density, and power efficiency, making it a strong candidate for legacy or specialized applications. While obsolete, its DDR3L architecture and industrial-grade reliability ensure continued suitability for embedded and networking systems. Engineers seeking a proven, high-performance DRAM solution for long-lifecycle designs will find this Micron device a dependable choice.

MT41K512M16TNA-107:E Documents

Download datasheets and manufacturer documentation for MT41K512M16TNA-107:E

PCN Assembly/Origin :

Tray Pkg Label Chgs 8/Oct/2020      

PCN Packaging :

Standard Pkg Label Chg 20/Feb/2019      

HTML Datasheet :

MT41K512M16