Micron Technology_MT41K512M8RH-125 AAT:E
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Micron Technology
MT41K512M8RH-125 AAT:E

774-MT41K512M8RH-125 AAT:E
IC DRAM 4GBIT PARALLEL 78FBGA

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Tech Specifications

Clock Frequency
800 MHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
78-FBGA (9x10.5)
Access Time
13.75 ns
Package / Case
78-TFBGA
Technology
SDRAM - DDR3L
Voltage - Supply
1.283V ~ 1.45V
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MT41K512M8RH-125 AAT:E Description

MT41K512M8RH-125 AAT:E Description

The MT41K512M8RH-125 AAT:E is a high-performance, 4Gbit DRAM memory IC chip designed by Micron Technology Inc. This chip is part of the obsolete but highly reliable memory solutions that offer robust performance and compatibility with various electronic systems. It features a parallel memory interface, providing efficient data transfer rates and ensuring seamless integration into existing architectures. The memory organization is 512M x 8, which allows for flexible memory management and scalability in different applications.

MT41K512M8RH-125 AAT:E Features

  • Memory Type and Organization: The MT41K512M8RH-125 AAT:E is a volatile DRAM memory chip with a 512M x 8 organization, offering a total memory size of 4Gbit. This configuration ensures high-density storage and efficient data access.
  • Clock Frequency: Operating at a clock frequency of 800 MHz, this DRAM chip delivers high-speed performance, making it suitable for applications requiring rapid data processing and retrieval.
  • Access Time: With an access time of 13.75 ns, the MT41K512M8RH-125 AAT:E ensures quick data access, enhancing overall system responsiveness and efficiency.
  • Voltage Supply: The chip operates within a voltage range of 1.283V to 1.45V, providing flexibility in power management and compatibility with low-power systems.
  • Moisture Sensitivity Level (MSL): Rated at MSL 3 (168 Hours), the MT41K512M8RH-125 AAT:E is designed to withstand moderate moisture exposure, ensuring reliability in various environmental conditions.
  • Package and Mounting: The chip is available in a 78FBGA package and is designed for surface mount applications, making it suitable for compact and high-density PCB designs.
  • Compliance and Standards: The MT41K512M8RH-125 AAT:E is ROHS3 compliant, ensuring it meets environmental and safety standards for electronic components. It also carries the ECCN classification of EAR99 and HTSUS code 8542.32.0036, facilitating compliance with international trade regulations.

MT41K512M8RH-125 AAT:E Applications

The MT41K512M8RH-125 AAT:E is ideal for a range of applications where high-speed, high-density memory solutions are required. Its automotive grade classification makes it suitable for automotive electronic systems, where reliability and performance are paramount. Additionally, it can be used in embedded systems, industrial control units, and networking equipment where robust memory solutions are essential for efficient operation.

Conclusion of MT41K512M8RH-125 AAT:E

The MT41K512M8RH-125 AAT:E is a versatile and reliable DRAM memory IC chip that offers high performance and compatibility with various electronic systems. Despite being an obsolete model, its robust technical specifications and compliance with industry standards make it a valuable component for applications requiring high-density, high-speed memory solutions. Its automotive grade classification and surface mount design further enhance its suitability for demanding environments and compact designs. For applications where reliability and performance are critical, the MT41K512M8RH-125 AAT:E remains a reliable choice.

FAQ

What voltage specification is listed for MT41K512M8RH-125 AAT:E?
The listed voltage-related specification for MT41K512M8RH-125 AAT:E is 1.283V ~ 1.45V.
What is the mounting type of MT41K512M8RH-125 AAT:E?
Is MT41K512M8RH-125 AAT:E currently in stock?
What is MT41K512M8RH-125 AAT:E?
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