The MT45W2MW16BAFB-708 WT is a high-performance PSRAM (Pseudo SRAM) memory IC chip designed by Micron Technology Inc. This device offers a memory size of 32 Mbit, organized as 2M x 16, making it suitable for applications requiring substantial memory capacity. The chip features a parallel memory interface, ensuring efficient data transfer and compatibility with a wide range of systems. With an access time of 70 ns and a write cycle time of 70 ns, it delivers rapid data processing capabilities, crucial for high-speed applications.
The MT45W2MW16BAFB-708 WT operates within a voltage supply range of 1.7V to 1.95V, providing flexibility and efficiency in power management. It is packaged in a 54VFBGA (54-ball Fine-Pitch Ball Grid Array) format, which is ideal for surface mount applications, ensuring robustness and reliability in various electronic designs. The device is REACH unaffected and has an ECCN classification of 3A991B2A, indicating compliance with international regulatory standards.
The MT45W2MW16BAFB-708 WT stands out with several unique features and advantages:
The MT45W2MW16BAFB-708 WT is versatile and finds applications in various sectors:
The MT45W2MW16BAFB-708 WT from Micron Technology Inc. is a high-performance PSRAM memory IC chip that offers a combination of speed, efficiency, and reliability. Its 70 ns access and write cycle times, coupled with a parallel interface and low power consumption, make it an excellent choice for applications requiring rapid data processing and energy efficiency. The surface mount technology and moisture sensitivity level of 2 (1 Year) ensure robustness and long-term stability, making it suitable for a wide range of environments. Whether used in consumer electronics, telecommunications, industrial automation, automotive systems, or medical devices, the MT45W2MW16BAFB-708 WT delivers exceptional performance and reliability, setting it apart from similar models in the market.
Download datasheets and manufacturer documentation for MT45W2MW16BAFB-708 WT