Micron Technology_MT46H32M16LFBF-5:B TR
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Micron Technology
MT46H32M16LFBF-5:B TR

774-MT46H32M16LFBF-5:B TR
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IC DRAM 512MBIT PAR 60VFBGA

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Tech Specifications

Clock Frequency
200 MHz
Memory Type
Volatile
Product Status
Obsolete
Supplier Device Package
60-VFBGA (8x9)
Access Time
5 ns
Package / Case
60-VFBGA
Technology
SDRAM - Mobile LPDDR
Voltage - Supply
1.7V ~ 1.95V
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MT46H32M16LFBF-5:B TR Description

MT46H32M16LFBF-5:B TR Description

The MT46H32M16LFBF-5:B TR is a high-performance DRAM memory IC chip manufactured by Micron Technology Inc. This 512 Mbit memory device is organized as 32M x 16 and features a parallel memory interface, making it suitable for a variety of applications requiring high-speed data access and storage. The chip operates within a supply voltage range of 1.7V to 1.95V and has an access time of 5 ns, ensuring rapid data retrieval. With a clock frequency of 200 MHz, it provides efficient performance for demanding applications. The MT46H32M16LFBF-5:B TR is housed in a surface-mount 60VFBGA package and is available in tape and reel (TR) packaging.

MT46H32M16LFBF-5:B TR Features

  • High-Speed Performance: With an access time of 5 ns and a clock frequency of 200 MHz, the MT46H32M16LFBF-5:B TR ensures rapid data access and processing, making it ideal for applications requiring high-speed memory solutions.
  • Volatile Memory: As a DRAM device, it provides volatile memory storage, which is essential for applications that require frequent data updates and access.
  • Wide Operating Voltage Range: The memory IC operates within a supply voltage range of 1.7V to 1.95V, offering flexibility in power supply design and compatibility with various systems.
  • Robust Compliance: The MT46H32M16LFBF-5:B TR is REACH unaffected and ROHS3 compliant, ensuring it meets environmental and safety standards for electronic components.
  • Moisture Sensitivity Level: With an MSL of 3 (168 hours), the device is suitable for manufacturing environments with controlled humidity levels.
  • Extended Temperature Range: The operating temperature range of 0°C to 70°C (TA) makes it suitable for a wide range of industrial and commercial applications.
  • Write Cycle Time: The write cycle time of 15 ns ensures efficient data writing capabilities, further enhancing the overall performance of the memory IC.

MT46H32M16LFBF-5:B TR Applications

The MT46H32M16LFBF-5:B TR is ideal for a variety of applications that require high-speed, high-density memory solutions. Some specific use cases include:

  • Networking Equipment: Ideal for routers, switches, and other networking devices that require fast data access and storage.
  • Consumer Electronics: Suitable for high-end consumer electronics such as gaming consoles, digital cameras, and smart TVs where rapid data processing is crucial.
  • Industrial Control Systems: Provides reliable memory solutions for industrial control systems and automation equipment that demand high-speed data handling.
  • Telecommunications: Effective in telecommunication infrastructure, including base stations and communication hubs, where quick data retrieval and storage are essential.

Conclusion of MT46H32M16LFBF-5:B TR

The MT46H32M16LFBF-5:B TR from Micron Technology Inc. is a high-performance DRAM memory IC chip that offers a combination of speed, density, and reliability. Its 512 Mbit capacity, organized as 32M x 16, and its parallel memory interface make it a versatile solution for various applications. The chip's high-speed access time of 5 ns and clock frequency of 200 MHz ensure efficient data processing, while its operating voltage range of 1.7V to 1.95V provides flexibility in power supply design. Despite being an obsolete product, the MT46H32M16LFBF-5:B TR remains a reliable choice for applications requiring high-speed, high-density memory solutions. Its compliance with REACH and ROHS3 standards further enhances its suitability for modern electronic systems.

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